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Amorphous or nanocrystalline AlN thin films formed from AlN: H

Published online by Cambridge University Press:  03 March 2011

Xiao-Dong Wang ,
K.W. Hipps ,
J.T. Dickinso  and
Ursula Mazur
Xiao-Dong Wang
Affiliation:
Materials Science Program, Washington State University, Pullman, Washington 99164-4620
K.W. Hipps
Affiliation:
Materials Science Program, Washington State University, Pullman, Washington 99164-4620
J.T. Dickinso
Affiliation:
Materials Science Program, Washington State University, Pullman, Washington 99164-4620
Ursula Mazur
Affiliation:
Materials Science Program, Washington State University, Pullman, Washington 99164-4620
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Abstract

This work describes the formation of stoichiometric AlN films by single ion-beam sputtering of Al, using an ionized N2 (75%) + H2 (25%) mixture, onto substrates heated to 200 °C or above. The role of substrate temperature on film composition and properties is followed in the substrate temperature range between ambient and 250 °C. Infrared spectra of freshly prepared and 2 month old (aged in air) films demonstrate that substrate heating significantly affects the chemical nature of the resulting films. SEM and STM data, combined with IR and UV-visible spectral results, indicate that films formed at a substrate temperature of ≥200 °C are very smooth and highly resistant to attack by atmospheric gases. X-ray diffraction data show no diffraction peaks, indicating that the film is either amorphous or crystalline on a scale of less than 4 nm.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 6 , June 1994 , pp. 1449 - 1455
Copyright
Copyright © Materials Research Society 1994

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References

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