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Aperiodic stepwise growth model for the velocity and orientation dependence of solute trapping

Published online by Cambridge University Press:  31 January 2011

L. M. Goldman  and
M. J. Aziz
L. M. Goldman
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
M. J. Aziz
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

An atomistic model for the dependence on interface orientation and velocity v of the solute partition coefficient k during rapid solidification is developed in detail. Starting with a simple stepwise growth model, the simple continuous growth model result is obtained for k(v) when the growth steps are assumed to pass at random intervals rather than periodically. The model is applied to rapid solidification of silicon. Crystal growth at all orientations is assumed to occur by the rapid lateral passage of (111) steps at speeds determined by the interface velocity and orientation. Solute escape is parametrized by a diffusion coefficient at the edge of the moving step and a diffusion coefficient at the terrace, far from the step edge. The model results in an excellent fit to data for the velocity and orientation dependence of k of Bi in Si.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 4 , August 1987 , pp. 524 - 527
Copyright
Copyright © Materials Research Society 1987

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References

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