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ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces

Published online by Cambridge University Press:  03 March 2011

B. Hornetz ,
H-J. Michel  and
J. Halbritter
B. Hornetz
Affiliation:
University of Karlsruhe, 76131 Karlsruhe, Germany
H-J. Michel
Affiliation:
Kernforschungszentrum Karlsruhe IMF I, Postfach 3640, 76021 Karlsruhe, Germany
J. Halbritter
Affiliation:
Kernforschungszentrum Karlsruhe IMF I, Postfach 3640, 76021 Karlsruhe, Germany
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Abstract

The main puzzle in oxidation of hexagonal SiC is the slower rate of the Si-terminated surface as compared to the C-terminated surface, which is blamed on an unknown interface compound. ARXPS is a unique method to identify minor amounts of interface compounds, especially for smooth surfaces. Our ARXPS analysis of oxidized Si-(001) and C-(001) surfaces of 6H SiC reveals the interface oxide Si4C4−xO2 (x < 2), likely a reaction product of a peroxidic O2-bond to a SiC double layer. Si4C4−xO2 occurs in larger thickness (≃1 nm) at the slowly oxidizing Si-(001) surface, whereas the C-(001) surface shows smaller amounts, diminishing fast with oxidation above 1000 K. Evidence is presented that with increasing amount of Si4C4−xO2 the oxidation of SiC to SiO2 is reduced. ARXPS is consistent with a layer of SiO2 containing less than 3% Si4C4O4 being an oxidation product of Si4C4−xO2. At the surface of SiO2, graphite and some Si4C4O4 exist, aside from standard adsorbates.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 12 , December 1994 , pp. 3088 - 3094
Copyright
Copyright © Materials Research Society 1994

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References

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