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Bismuth titanium indium antimony oxide: A low-temperature-coefficient, high-K dielectric material

Published online by Cambridge University Press:  31 January 2011

R. J. Cava ,
J. J. Krajewski ,
Y. L. Qin  and
H. W. Zandbergen
R. J. Cava
Affiliation:
Lucent Technologies Bell Laboratories, Murray Hill, New Jersey 07574
J. J. Krajewski
Affiliation:
Lucent Technologies Bell Laboratories, Murray Hill, New Jersey 07574
Y. L. Qin
Affiliation:
National Institute for HREM, Laboratory for Materials Science, Delft University of Technology, 2628 AL Delft, The Netherlands
H. W. Zandbergen
Affiliation:
National Institute for HREM, Laboratory for Materials Science, Delft University of Technology, 2628 AL Delft, The Netherlands
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Abstract

The 1 MHz dielectric properties for mixed-phase polycrystalline ceramics in the system Bi4Ti3O12–Bi(InxSb1x)O3 were reported. In the vicinity of ambient temperature, the dielectric constants for the Sb and In end-members were approximately 430 and 160, respectively, and the temperature coefficients of dielectric constant (TCKs) were approximately -7600 and +430 ppm/deg. At an overall composition of Bi4Ti3O12:Bi(In0.37Sb0.63)O3 a dielectric constant of 144 and a low TCK were found. Powder x-ray diffraction and electron microscopy analyses indicated that the optimal composition contained three major phases. Deviation of any of the elements from the above ratio leads to degradation of the properties.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 12 , December 2000 , pp. 2672 - 2676
Copyright
Copyright © Materials Research Society 2000

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References

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