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Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

Published online by Cambridge University Press:  03 March 2011

L.M. Porter ,
R.F. Davis ,
J.S. Bow ,
M.J. Kim  and
R.W. Carpenter
L.M. Porter
Affiliation:
Department-of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
R.F. Davis
Affiliation:
Department-of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
J.S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
M.J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
R.W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
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Abstract

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 1 , January 1995 , pp. 26 - 33
Copyright
Copyright © Materials Research Society 1995

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References

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