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Creep rupture induced silica-based nanofibers formed on fracture surfaces of Ti3SiC2

Published online by Cambridge University Press:  03 March 2011

Z.M. Sun ,
T.J. Zhen  and
M.W. Barsoum
Z.M. Sun*
Affiliation:
Department of Materials Science and Engineering, Drexel University,Philadelphia, Pennsylvania 19104; and National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan
T.J. Zhen
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
M.W. Barsoum
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104
*
a)Address all correspondence to this author. e-mail: z.m.sun@aist.go.jp; barsoumw@drexel.edu
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Abstract

After creep failure at 1300 °C, silica-based nanofibers with diameters of ∼250 nm and lengths of up to a few tens of microns were observed on the fracture surfaces of Ti3SiC2. A possible mechanism for the formation of these fibers is proposed.

Keywords

MorphologyScanning electron microscopy (SEM)
Type
Rapid Communications
Information
Journal of Materials Research , Volume 20 , Issue 11 , November 2005 , pp. 2895 - 2897
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1Jeitschko, W. and Nowotny, H.: The crystal structure of Ti3SiC2—A new complex carbide. Monatsh. Chem 98, 329 (1967).Google Scholar
2Barsoum, M.W.: The MN+1AXN phases: A new class of solids: Thermodynamically stable nanolaminates. Prog. Solid State Chem. 28, 201 (2000).CrossRefGoogle Scholar
3Sun, Z.M., Hashimoto, H., Zhang, Z.F., Yang, S.L. and Abe, T. Synthesis of a metallic ceramic-Ti3SiC2 by PDS process and its properties, in Solid-State Chemistry of Inorganic Materials IV, edited by M.A. Alario-Franco, M. Greenblatt, G. Rohrer, and M.S. Whittingham (Mater. Res. Soc. Symp. Proc. 755, Warrendale, PA, 2002), p. 179.Google Scholar
4Sun, Z.M., Zhang, Z.F., Hashimoto, H. and Abe, T.: Ternary compound Ti3SiC2. I. Pulse discharge sintering synthesis. Mater. Trans. 43, 428 (2002).CrossRefGoogle Scholar
5Goto, T. and Hirai, T.: Chemically vapor deposited Ti3SiC2. Mater. Res. Bull. 22, 1195 (1987).CrossRefGoogle Scholar
6Li, J-F., Pan, W., Sato, F. and Watanabe, R.: Mechanical properties of polycrystalline Ti3SiC2 at ambient and elevated temperatures. Acta Mater. 49, 937 (2001).CrossRefGoogle Scholar
7Barsoum, M.W., El-Raghy, T. and Ogbuji, L.: Oxidation of Ti3SiC2 in air. J. Electrochem. Soc. 144, 2508 (1997).Google Scholar
8Barsoum, M.W., Ho-Duc, L.H.,  Radovic, M. and  El-Raghy, T.: Long time oxidation study of Ti3SiC2, Ti3SiC2/SiC and Ti3SiC2/TiC composites in air. J. Electrochem. Soc. 150 B166 (2003).Google Scholar
9Radovic, M., Barsoum, M.W., El-Raghy, T. and Wiederhorn, S.M.: Tensile creep of coarse-grained Ti SiC in the 1000–1200 °C temperature range. J. Alloys Compd. 361, 299 (2003).Google Scholar
10Zhen, T., Barsoum, M.W. and Kalidindi, S.R.: Compressive creep of Ti3SiC2 in the 1100 to 1300 °C temperature range in air. Acta Mater. (in press).Google Scholar
11Yang, S.L., Sun, Z.M. and Hashimoto, H.: Oxidation of Ti3SiC2 at 1000C in air. Oxid. Met. 59, 155 (2003).CrossRefGoogle Scholar
12Barsoum, M.W., El-Raghy, T., Farber, L., Amer, M., Christini, R. and  Adams, A.: The topotaxial transformation of Ti3SiC2 to form a partially ordered cubic TiC0.67 phase by the diffusion of Si into molten cryolite. J. Electrochem. Soc. 146, 3919 (1999).Google Scholar