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Deep center luminescence versus surface preparation of ZnSe single crystals

Published online by Cambridge University Press:  31 January 2011

J. A. Garcia ,
V. Muñoz ,
C. Martinez-Tomas  and
J. J. S. Garitaonandia
J. A. Garcia
Affiliation:
Departamento de Física Aplicada II, Facultad de Ciencias, Universidad del País Vasco, Lejona (Vizcaya), Spain
V. Muñoz
Affiliation:
Departamento de Física Aplicada and Instituto de Ciencia de Materiales de la Universitat de València (ICMUV), c/Doctor Moliner No. 50, E-46100 Burjassot (València), Spain
C. Martinez-Tomas
Affiliation:
Departamento de Física Aplicada and Instituto de Ciencia de Materiales de la Universitat de València (ICMUV), c/Doctor Moliner No. 50, E-46100 Burjassot (València), Spain
J. J. S. Garitaonandia
Affiliation:
Departamento de Física Aplicada II, Facultad de Ciencias, Universidad del País Vasco, Lejona (Vizcaya), Spain
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Abstract

A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.

Information

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 5 , May 2001 , pp. 1245 - 1248
Copyright
Copyright © Materials Research Society 2001

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References

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