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Deposition of tin oxide films by pulsed laser evaporation

Published online by Cambridge University Press:  31 January 2011

R. D. Vispute ,
V. P. Godbole ,
S. M. Chaudhari ,
S. M. Kanetkar  and
S. B. Ogale
R. D. Vispute
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
V. P. Godbole
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
S. M. Chaudhari
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
S. M. Kanetkar
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
S. B. Ogale
Affiliation:
Department of Physics, University of Poona, Pune 411007, India
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Abstract

Thin films of SnO2−x (0<x<1) were deposited on Corning glass and alumina substrates by employing a pulsed laser evaporation (PLE) technique. The microstructural features of the films were probed with Sn119 conversion electron Mössbaucr spectroscopy (CEMS) whereas the structural characteristics were identified by using low-angle x-ray diffraction measurements. The electrical and optical properties have also been studied. It is shown that films with conductivity of 3 × 102 (ohm·cm)−1 and transmission of 90% can be obtained by appropriate postannealing of the as-deposited films in air and vacuum. The energy gap of this nearly stoichiometric single-phase SnO2 film was found to be 3.5 eV and spectroscopic ellipsometry measurements indicated the refractive index lobe typically between 1.8–1.9 over the wavelength range of 400–800 nm.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1180 - 1186
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Thummler, F., Holleck, H., and Prakash, L., High Temp. High Pressures(GB) 14(2), 129 (1982).Google Scholar
2Calvert, P., Lalanandham, R., Parish, M., and Tormey, E., Br. Ceram. Proc.(GB) 37, 249 (1986).Google Scholar
3Wu, X. D., Dijikkamp, D.Ogale, S. B., Inam, A., Chase, E. W., Miceli, P. F., Chang, C., Tarascon, J. M., and Venkatesan, T., Appl. Phys. Lett. 51, L1487 (1987).Google Scholar
4Hanabusa, M., Mater. Sci. Rep. 2, 51 (1987).CrossRefGoogle Scholar
5Sato, T., Furuno, S., Iguchi, S., and Hanabusa, M., Jpn. J. Appl. Phys. 26 (9), L1487 (1987).CrossRefGoogle Scholar
6Hansen, S. G. and Robitaille, T. E., Appl. Phys. Lett. 52, 81 (1988).CrossRefGoogle Scholar
7Kane, J., Schweizer, H. P., and Kern, W., J. Electrochem. Soc. 123, 270 (1976).CrossRefGoogle Scholar
8Baliga, B. J. and Gandhi, S. K., J. Electrochem. Soc. 123, 941 (1976).CrossRefGoogle Scholar
9Watanabe, H., Jpn. J. Appl. Phys. 9, 1551 (1970).CrossRefGoogle Scholar
10Shanti, E., Dutta, V., Banergee, A., and Chopra, K. L., J. Appl. Phys. 51, 12 (1980).Google Scholar
11Rohatgi, A., Viverito, T. R., and Slack, L. H., J. Am. Ceram. Soc. 57, 278 (1974).CrossRefGoogle Scholar
12Kim, H. and Laitinen, H. A., J. Am. Ceram. Soc. 58, 23 (1975).CrossRefGoogle Scholar
13Lehmann, H. W. and Widmer, R., Thin Solid Films 27, 359 (1975).CrossRefGoogle Scholar
14Carlson, D. E., J. Electrochem. Soc. 122, 1334 (1975).CrossRefGoogle Scholar
15Boequet, J. P., Chu, Y. Y., Emery, G. T., and Perlman, M. L., Phys. Rev. 167, 1117 (1988).CrossRefGoogle Scholar
16MOSFIT program was originally written by Kerber, E. from Universite des Saarlandes, Saarbruken, and it was adopted for the ICL 1904s Computer by Date, S. K., National Chemical Laboratory, Pune, India.Google Scholar
17Stockier, H. A., Sono, H., and Herber, R. H., J. Chem. Phys. 45, 1182 (1966).CrossRefGoogle Scholar
18Mitrofanov, K. P., Plotnikova, M. V., and Shipinel, V. S., Sov. Phys. JETP 21 524 (1965).Google Scholar
19Greenwood, N. N. and Gibb, T. C., Mossbauer Spectroscopy (Chapman and Hall, London, 1971).CrossRefGoogle Scholar
20Korecki, J., Krop, K., and Toll, K., Thin Solid Films 59, 147 (1979).Google Scholar
21Shanti, E., Banerjee, A., Dutta, V., and Chopra, K. L., Thin Solid Films 71, 237 (1980).CrossRefGoogle Scholar
22Detritz, R. L., Phys. Rev. 104, 1508 (1956).CrossRefGoogle Scholar
23Jarzebski, Z. M. and Marton, J. P., J. Electrochem. Soc. 123, 333C (1976).CrossRefGoogle Scholar
24Manifacier, J. C., Murcia, M. de, Fillard, J. P., and Vircario, E., Thin Hall Solid Films 41, 127 (1977).CrossRefGoogle Scholar