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Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator

Published online by Cambridge University Press:  31 January 2011

J. S. Huang ,
Chih Chen ,
C. C. Yeh ,
K. N. Tu ,
T. L. Shofner ,
J. L. Drown ,
R. B. Irwin  and
C. B. Vartuli
J. S. Huang
Affiliation:
Bell Labs, Lucent Technologies, 9333 South John Young Parkway, Orlando, Florida 32819
Chih Chen
Affiliation:
Department of Materials Science and Engineering, University of California—Los Angeles, Los Angeles, California 90095–1595
C. C. Yeh
Affiliation:
Department of Materials Science and Engineering, University of California—Los Angeles, Los Angeles, California 90095–1595
K. N. Tu
Affiliation:
Department of Materials Science and Engineering, University of California—Los Angeles, Los Angeles, California 90095–1595
T. L. Shofner
Affiliation:
Cirent Semiconductor, 9333 South John Young Parkway, Orlando, Florida 32819
J. L. Drown
Affiliation:
Cirent Semiconductor, 9333 South John Young Parkway, Orlando, Florida 32819
R. B. Irwin
Affiliation:
Cirent Semiconductor, 9333 South John Young Parkway, Orlando, Florida 32819
C. B. Vartuli
Affiliation:
Cirent Semiconductor, 9333 South John Young Parkway, Orlando, Florida 32819
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Abstract

Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure due to high current density in contacts to n+- and p+-silicon-on-insulator (SOI). We found similar polarity effects below certain current: the p+-SOI failed preferentially at the cathode, while the n+-SOI failed preferentially at the anode. At higher current, damage occurred at both contacts. The effect of current crowding was evident in both cases.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 11 , November 2000 , pp. 2387 - 2392
Copyright
Copyright © Materials Research Society 2000

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