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The effect of stoichiometry on the microstructure and properties of lead lanthanum titanate thin films

Published online by Cambridge University Press:  03 March 2011

Ashraf R. Khan*
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061
*
a)Current address: Quester Technology, Inc., 47633 Westinghouse Drive, Frernom, California 94539.
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Abstract

Thin films of Lead Lanthanum Titanate (PLT) corresponding to 28 at. % of La were prepared by the metal-organic decomposition (MOD) process. The films were fabricated from two solutions of different composition. The composition of the first solution was determined, assuming that the incorporation of La3+ in the PbTiO3 structure gives rise to A-site or Pb vacancies, whereas for the composition of the other solution the creation of B-site or Ti vacancies was assumed. The effect of excess lead on the microstructure and the optical and electrical properties was studied for 0% to 20% excess PbO. The x-ray diffraction patterns of all films at room temperature indicated a cubic structure with a lattice constant of 3.92 Å. Optical and electrical measurements showed the films made assuming B-site vacancies had better properties. In general, excess PbO was found to improve the optical transmittance as well as the electrical properties of films. However, in films assuming the formation of B-site vacancies, PLT showed improved electrical properties only up to 5–10% excess PbO, while higher PbO additions had a deleterious effect. The films had a high resistivity, good relative permittivity, low loss, very low leakage current density, and high charge storage density. A type-B film with 10% excess Pb had a relative permittivity of 1340 at 100 kHz and a charge storage density of around 16.1 μC/cm2 at a field of 200 kV/cm at room temperature.

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Articles
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Shrout, T.R. and Halliyal, A., Am. Ceram. Soc. Bull. 66 (4) 704711 (1987).Google Scholar
2Parker, L. and Tasch, A. F., IEEE Circuits and Devices Mag. 1726 (Jan. 1990).CrossRefGoogle Scholar
3Hennings, D. and Rosenstein, G., Mater. Res. Bull. 7 (12), 15051514 (1972).CrossRefGoogle Scholar
4Adachi, H., Kawaguchi, T., Kitabatake, M., and Wasa, K., Jpn. J.Appl. Phys. 22 (supplement 22-2), 1113 (1983).CrossRefGoogle Scholar
5Adachi, H., Mitsuyu, T., Yamazaki, O., and Wasa, K., J. Appl. Phys. 60 (2), 736741 (15 July 1986).CrossRefGoogle Scholar
6Ijima, K., Takayama, R., Tomita, Y., and Ueda, I., J. Appl. Phys. 60 (8), 29142919 (15 Oct. 1986).CrossRefGoogle Scholar
7Adachi, H. and Wasa, K., IEEE Trans. Ultrason. Ferroelect. Frequency Control 38 (6), 645655 (Nov. 1991).CrossRefGoogle Scholar
8Fox, G.R., Krupanidhi, S.B., More, K.L., and Allard, L.F., J. Mater. Res. 7, 30393055 (1992).CrossRefGoogle Scholar
9Fox, G.R., Krupanidhi, S.B., and More, K.L., J. Mater. Res. 8, 21912202 (1993).CrossRefGoogle Scholar
10Fox, G.R. and Krupanidhi, S.B., J. Mater. Res. 8, 22032215 (1993).CrossRefGoogle Scholar
11Schwartz, R.W., Tuttle, B.A., Doughty, D.H., Land, C.E., Goodnow, D.C., Hernandez, C. L., Zender, T. J., and Martinez, S.L., IEEE Trans. Ultrason. Ferroelec. Frequency Control 38 (6), 677682 (Nov. 1991).CrossRefGoogle Scholar
12Shimizu, Y., Udayakumar, K. R., and Cross, L. E., J. Am. Ceram. Soc. 74 (12), 30233027 (Dec. 1991).CrossRefGoogle Scholar
13Dey, S.K. and Lee, J.J., IEEE Trans. Electron Devices 39 (7), 16071613 (July 1992).CrossRefGoogle Scholar
14Yamamoto, T., Igarashi, H., and Okazaki, K., J. Am. Ceram. Soc. 66 (5), 363366 (May 1983).CrossRefGoogle Scholar
15Hennings, D. and Härdtl, K., Phys. Status Solidi A 3, 478–474 (1970).CrossRefGoogle Scholar
16Hennings, D., Mater. Res. Bull. 6 (5), 329340 (1971).CrossRefGoogle Scholar
17Keizer, K. and Burggraaf, A. J., Ferroelectrics 14, 671673 (1976).CrossRefGoogle Scholar
18Kwok, C. K., Ph. D. Thesis, Virginia Polytechnic Institute and State University (July 1992).Google Scholar
19Tuttle, B.A., Schwartz, R.W., Doughty, D.H., and Voigt, J.A., in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1990), pp. 159165.Google Scholar
20Bernstein, S.D., Kisler, Y., Wahl, J.M., Bernacki, S.E., and Collins, S.R., in Ferroelectric Thin Films, edited by Myers, E. R. and Kingon, A. I. (Mater. Res. Soc. Symp. Proc. 200, Pittsburgh, PA, 1992), pp. 335340.Google Scholar
21Peng, C.H. and Desu, S.B., in Ferroelectric Thin Films II, edited by Kingon, A. I., Myers, E. R., and Tuttle, B. A. (Mater. Res. Soc. Symp. Proc. 243, Pittsburgh, PA, 1992), pp. 335340.Google Scholar
22Practical Scanning Electron Microscopy, edited by Goldstein, J. I and Yakowitz, H. (Plenum Press, New York, 1977).Google Scholar
23Haertling, G.H. and Land, C.E., J. Am. Ceram. Soc. 54 (1), 111 (Jan. 1971).CrossRefGoogle Scholar
24Herbert, J. M., Ceramic Dielectrics and Capacitors (Gordon and Breach Science Publishers, New York, 1985), pp. 3235.Google Scholar