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Electrical characterization of defect states in local conductivity domains in ZnO:N,As layers

Published online by Cambridge University Press:  31 January 2011

Andre Krtschil ,
Armin Dadgar ,
Annette Diez  and
Alois Krost
Andre Krtschil*
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
Armin Dadgar
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
Annette Diez
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
Alois Krost
Affiliation:
Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Magdeburg 39016, Germany
*
a)Address all correspondence to this author. e-mail: andre.krtschil@physik.uni-magdeburg.de
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Abstract

P- and n-type conductivity domains in dual-doped ZnO:As+N layers grown by metal organic vapor phase epitaxy on GaN–sapphire templates were electrically microcharacterized by scanning capacitance microscopy (SCM) and scanning surface potential microscopy (SSPM) techniques with respect to their defect states. The p-type domains were found to be dominated by two acceptors with thermal activation energies of about 80 and 270 meV, as observed by transient SCM scans at different temperatures. Optically excited SSPM scans revealed defect-to-band transitions at 400, 459, and 505 nm omnipresent in both domain types as well as a shallower transition at 377 nm exclusively in the p-type regions. According to the similar energy levels, the optical transitions at 377 and 400 nm are assigned to acceptor states, whereby the 80-meV acceptor is probably responsible for the conversion from n- to p-type regions in the domains.

Keywords

DefectsII-VIMicrostructure
Type
Outstanding Meeting Papers
Information
Journal of Materials Research , Volume 22 , Issue 7 , July 2007 , pp. 1775 - 1778
Copyright
Copyright © Materials Research Society 2007

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References

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