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Growth kinetics of ZnO prepared by organometallic chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

P. Souletie  and
B. W. Wessels
P. Souletie
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C. For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 4 , August 1988 , pp. 740 - 744
Copyright
Copyright © Materials Research Society 1988

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References

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