Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T23:42:08.543Z Has data issue: false hasContentIssue false

High resolution electron microscopy of ion-irradiated GdBa2Cu3O7

Published online by Cambridge University Press:  31 January 2011

G. Van Tendeloo
Affiliation:
University of Antwerp (RUCA) Groenenborgerlaan 171, B2020, Antwerp, Belgium
M-O. Ruault
Affiliation:
Centre de Spectrométrie Nucléaire et Spectrométrie de Masse, IN2P3 CNRS Bât. 108, 91405 Campus Orsay, France
H. Bernas
Affiliation:
Centre de Spectrométrie Nucléaire et Spectrométrie de Masse, IN2P3 CNRS Bât. 108, 91405 Campus Orsay, France
M. Gasgnier
Affiliation:
UPR 210, CNRS, 1 Place A. Briand, 92195 Meudon, France
Get access

Abstract

GdBa2Cu3O7 crystals were irradiated at room temperature with 200 keV Ne ions and 300 keV Xe ions. In situ standard TEM and further HREM studies show two types of extended defects: (i) mobile extended defects, which account for the preferential defect pinning to twin boundaries reported earlier. These defects are rapidly recovered and difficult to observe by HREM investigations; (ii) stable amorphous areas which are clearly identified by HREM observations. Their overlapping and aggregation conceivably lead to amorphization of the sample.

Type
Articles
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Meyer, O., in Studies of High Temperature Superconductors, edited by Narlikar, A. V. (Nova Science, New York, 1989).Google Scholar
2English, C. A., Marwick, A. D., Poate, J. M., Bernas, H., Clark, G. J., and Meyer, O., from the proceedings of the Intern. Workshop on Ion Beam Modification and Processing of High T c Superconductors: Physics and Devices, J. Mater. Res. (in press).Google Scholar
3Ruault, M. O., Bernas, H., Lesueur, J., Dumoulin, L., Nicolas, M., Buger, J. P., Gasgnier, M., Noël, H., Gougeon, P., Potel, M., and Levet, J. C., Europhysics Lett. 5, 435 (1988).CrossRefGoogle Scholar
4Kirk, M. A., Frischherz, M. C., Liu, J. C., Funk, L. L., Thompson, L. J., Ryan, E. A., Ockers, S. T., and Weber, H. W., Physica C 162164, 532 (1989).Google Scholar
5Kirk, M. A. (private communication).Google Scholar
6Ruault, M-O., Barrachin, M., Lesueur, J., Dumoulin, L., Bernas, H., Gasgnier, M., Levet, J. C., Noël, H., Gougeon, R., and Potel, M., Physica C 162164, 77 (1989).Google Scholar
7Ruault, M-O., Bernas, H., Gasgnier, M., Levet, J-C., Noël, H., Gougeon, P., and Potel, M., Revue Phys. Appl. 25, 49 (1990).CrossRefGoogle Scholar
8Tholence, J. L., Noël, H., Levet, J. C., Potel, M., and Gougeon, P., Solid State Commun. 65, 1131 (1987).CrossRefGoogle Scholar
9 M. Salomé, Raynaud, B., Schack, M., Chaumont, J., Ruault, M-O., and Bernas, H., J. Phys. E 18, 331 (1985).Google Scholar
10Cembali, F., Galloni, R., Servidori, M., and Zignani, F., in Ion Implantation in Semiconductors, edited by Chernow, F., Borders, J. A., and Brice, D. K. (Plenum Press, New York and London, 1976), p. 141.Google Scholar
11Ruault, M-O., Chaumont, J., and Bernas, H., Nucl. Instrum. Methods 209/210, 351 (1983).CrossRefGoogle Scholar
12Zandbergen, H. W., Van Tendeloo, G., Okabe, T., and Amelinckx, S., Phys. Status Solidi (a) 103, 45 (1987).CrossRefGoogle Scholar
13Cohen, C., Benyagoub, A., Bernas, H., Chaumont, J., Thomé, L., Berti, M., and Drigo, A. V., Phys. Rev. B 31, 5 (1985).CrossRefGoogle Scholar