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Hillocks on half-micron aluminum lines

Published online by Cambridge University Press:  31 January 2011

Carey A. Pico
Affiliation:
Texas Instruments, Inc., Corporate Research, Development, and Engineering, MS 944. P.O. Box 655012, Dallas, Texas 75265
Tom D. Bonifield
Affiliation:
Texas Instruments, Inc., Corporate Research, Development, and Engineering, MS 944. P.O. Box 655012, Dallas, Texas 75265
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Abstract

A new regime of hillock growth has been observed in patterned Al98.5 W.%Si1.0 Wt.%-Cuo0.5 wt.% films. The “surface” hillock and “side” hillock, which have been seen previously, form on patterned metal lines having linewidths greater than the larger Al alloy grain sizes (∼3 μm). None is seen on the fabricated lines having linewidths between 0.9 and 2 μm where long-range grain boundary diffusion cannot occur because of its bamboo structure. However, a new type of hillock, the “line hillock”, occurs in structures having linewidths of 0.6 μm. The presence of this last type of hillock is inconsistent with the current understanding of hillock formation and may present severe restrictions on the down-sizing of ultra–large–scale integrated devices.

Type
Materials Communications
Copyright
Copyright © Materials Research Society 1991

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