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The influence of the Ti/Ba ratio on the formation of pyroelectric and piezoelectric quasi-amorphous films of BaTiO3

Published online by Cambridge University Press:  31 January 2011

David Ehre ,
Vera Lyahovitskaya  and
Igor Lubomirsky
David Ehre
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76200, Rehovot 76100, Israel
Vera Lyahovitskaya
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76200, Rehovot 76100, Israel
Igor Lubomirsky*
Affiliation:
Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76200, Rehovot 76100, Israel
*
a)Address all correspondence to this author. e-mail: Igor.Lubomirsky@weizmann.ac.il
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Abstract

The influence of the Ti/Ba ratio on the formation of pyroelectric and piezoelectric quasi-amorphous BaTiO3 films was investigated. Three types of films, Ti-rich, Ba-rich, and stoichiometric, were pulled through a temperature gradient or subjected to isothermal heating. The quasi-amorphous polar phase only formed in films pulled through the temperature gradient with Ti/Ba ratio within the broad range of 0.95–1.1. This implies that quasi-amorphous pyroelectric and piezoelectric thin films are significantly more tolerant of a deviation from stoichiometry than their crystalline counterparts.

Keywords

AmorphousPiezoelectricFilm
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 10 , October 2007 , pp. 2742 - 2746
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1Lyahovitskaya, V., Zon, I., Feldman, Y., Cohen, S.R., Tagantsev, A.K.Lubomirsky, I.: Pyroelectricity in highly stressed quasi-amorphous thin films. Adv. Mater. 15(21), 1826 2003Google Scholar
2Frenkel, A.I., Feldman, Y., Lyahovitskaya, V., Wachtel, E.Lubomirsky, I.: Microscopic origin of polarity in quasi-amorphous BaTiO3. Phys. Rev. B 71(2), 024116 2005Google Scholar
3Ehre, D., Cohen, H., Lyahovitskaya, V., Tagantsev, A.K.Lubomirsky, I.: Structural transformations during formation of quasi-amorphous BaTiO3. Adv. Func. Mater. 17, 1204 2007CrossRefGoogle Scholar
4Ebralidze, I., Lyahovitskaya, V., Zon, I., Wachtel, E.Lubomirsky, I.: Anomalous pre-nucleation volume expansion of amorphous BaTiO3. J. Mater. Chem. 15(39), 4258 2005Google Scholar
5Lyahovitskaya, V., Feldman, Y., Zon, I., Wachtel, E., Gartsman, K., Tagantsev, A.K.Lubomirsky, I.: Formation and thermal stability of quasi-amorphous thin films. Phys. Rev. B 71(9), 094205 2005Google Scholar
6Ehre, D., Lyahovitskaya, V., Tagantsev, A.K.Lubomirsky, I.: Amorphous piezo- and pyro-electric phases of BaZrO3 and SrTiO3. Adv. Mater. 19(11), 1515 2007Google Scholar
7Chiou, B.S.Lin, M.C.: Electrical-properties of amorphous barium-titanate films prepared by low-power rf-sputtering. Thin Solid Films 248(2), 247 1994CrossRefGoogle Scholar
8Kawano, H., Morii, K.Nakayama, Y.: Effects of crystallization on structural and dielectric properties of thin amorphous films of (1−x)BaTiO3−x SrTiO3 (x = 0–0.5, 1.0). J. Appl. Phys. 73(10), 5141 1993CrossRefGoogle Scholar
9Nam-Yang, L., Sekine, T., Ito, Y.Uchino, K.: Deposition profile of RF-magnetron-sputtered BaTiO3 thin films. Jpn. J. Appl. Phys. L 33(3A), 1484 1994Google Scholar
10Rossnagel, S.M., Cuomo, J.J.Westwood, W.D.: Handbook of Plasma Processing Technology Noyes Publications William Andrew Publishing, LLC, Norwich, NY 1990Google Scholar
11Wohlecke, M., Marrello, V.Onton, A.: Refractive-index of BaTiO3 and SrTiO3 films. J. Appl. Phys. 48(4), 1748 1977CrossRefGoogle Scholar
12Jia, Q.X., Chang, L.H.Anderson, W.A.: Interactions between ferroelectric BaTiO3 and Si. J. Electron. Mater. 23(6), 551 1994Google Scholar
13Guenter, P.: New applications of ferroelectrics for optical-devices. Ferroelectrics 53(1–4), 157 1984CrossRefGoogle Scholar
14Inorganic Crystal Structure Database http://www.fiz-karlsruhe.de/fiz/products/icsd/icsd.html, ICSD Collection Code 6245.Google Scholar
15Liu, W.T., Lakshmikumar, S.T., Knorr, D.B., Rymaszewski, E.J., Lu, T.M.Bakhru, H.: Thermally stable amorphous BaxTi2−xOy thin films. Appl. Phys. Lett. 66(7), 809 1995Google Scholar
16Inorganic Crystal Structure Database http://www.fiz-karlsruhe.de/fiz/products/icsd/icsd.html, ICSD Collection Code 14299.Google Scholar
17Inorganic Crystal Structure Database http://www.fiz-karlsruhe.de/fiz/products/icsd/icsd.html, ICSD Collection Code 281548.Google Scholar
18He, J.Q., Jia, C.L., Vaithyanathan, V., Schlom, D.G., Schubert, J., Gerber, A., Kolhstedt, H.H.Wang, R.H.: Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates. J. Appl. Phys. 97(10), 104921, 2005Google Scholar
19Hubbard, K.J.Schlom, D.G.: Thermodynamic stability of binary oxides in contact with silicon. J. Mater. Res. 11(11), 2757 1996CrossRefGoogle Scholar
20Zhang, H.Z., Finnegan, M.Banfield, J.F.: Preparing single-phase nanocrystalline anatase from amorphous titania with particle sizes tailored by temperature. Nano Lett. 1(2), 81 2001CrossRefGoogle Scholar