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Investigation of optical anisotropy of refractive-index-profiled porous silicon employing generalized ellipsometry

Published online by Cambridge University Press:  31 January 2011

S. Zangooie ,
R. Jansson  and
H. Arwin
S. Zangooie*
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
R. Jansson
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
H. Arwin
Affiliation:
Laboratory of Applied Optics, Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
*
a)Address all correspondence to this author. e-mail: shaza@ifm.liu.se
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Abstract

Porosity depth profiles in porous silicon were realized by time modulation of the applied current density during electrochemical etching of crystalline silicon. The samples were investigated by variable angle spectroscopic ellipsometry. Using a basic optical model based on isotropy assumptions and the Bruggeman effective medium approximation, deviations from an ideal profile in terms of an interface roughness between the silicon substrate and the porous silicon layer and a compositional gradient normal to the surface were revealed. Furthermore, optical anisotropy of the sample was investigated by generalized ellipsometry. The anisotropy was found to be uniaxial with the optic axis tilted from surface normal by about 25°. The material was also found to exhibit positive birefringence.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 11 , November 1999 , pp. 4167 - 4175
Copyright
Copyright © Materials Research Society 1999

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