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Low temperature solid-state epitaxy of LiNbO3 films by a dipping-pyrolysis process using Li-trifluoroacetate

Published online by Cambridge University Press:  31 January 2011

T. Manabe ,
I. Yamaguchi ,
W. Kondo ,
T. Kumagai  and
S. Mizuta
T. Manabe
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
I. Yamaguchi
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
W. Kondo
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
T. Kumagai
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
S. Mizuta
Affiliation:
National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305–8565, Japan
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Abstract

Epitaxially grown LiNbO3 thin films were prepared on sapphire(012) (R-plane) substrates by a dipping-pyrolysis process using two kinds of lithium sources, i.e., Li-2-ethylhexanoate and Li-trifluoroacetate, which are pyrolyzed in air to Li2CO3 and LiF, respectively. Crystallization temperature and alignment of LiNbO3 films on sapphire(012) were found to depend greatly on the Li sources. Dominantly [100]-oriented epitaxial LiNbO3 films were crystallized at around 600 °C using 2-ethylhexanoate, whereas dominantly [012]-oriented epitaxial LiNbO3 films resulted at a temperature as low as 400 °C using trifluoroacetate.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 4 , April 1998 , pp. 834 - 836
Copyright
Copyright © Materials Research Society 1998

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References

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