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Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method

Published online by Cambridge University Press:  31 January 2011

Hyungsoo Choi ,
Sungho Park ,
Yi Yang ,
HoChul Kang ,
Kyekyoon (Kevin) Kim ,
M. Y. Sung  and
Ho G. Jang
Hyungsoo Choi*
Affiliation:
Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Sungho Park
Affiliation:
Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Yi Yang
Affiliation:
Thin Film and Charged Particle Research Laboratory, Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
HoChul Kang
Affiliation:
Thin Film and Charged Particle Research Laboratory, Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
Kyekyoon (Kevin) Kim
Affiliation:
Thin Film and Charged Particle Research Laboratory, Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
M. Y. Sung
Affiliation:
Department of Electrical Engineering and Division of Chemistry and Molecular Engineering, Korea University, Seoul 136–701, Korea
Ho G. Jang
Affiliation:
Department of Electrical Engineering and Division of Chemistry and Molecular Engineering, Korea University, Seoul 136–701, Korea
*
a)Address all correspondence to this author.
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Abstract

Low-temperature deposition of high-quality (Ba, Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charged liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280 °C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300 °C and subsequently annealed at 700 °C, were 2.5 × 10−9 A/cm2 at 1.5 V and 305, respectively.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 17 , Issue 8 , August 2002 , pp. 1888 - 1891
Copyright
Copyright © Materials Research Society 2002

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