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The measurement and analysis of epitaxial recrystallization kinetics in ion-beam-amorphized SrTiO3

Published online by Cambridge University Press:  03 March 2011

J. Rankin ,
B.W. Sheldon  and
L.A. Boatner
J. Rankin
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
B.W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912
L.A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831–6056
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Abstract

The solid-state epitaxial-regrowth kinetics of ion-beam-amorphized SrTiO3 surfaces annealed in water-vapor-rich atmospheres have been studied using time-resolved reflectivity (TRR). For this material, the conversion of the reflectivity-versus-time data obtained from the TRR measurements to recrystallized depth-versus-time data is more complicated than in systems such as silicon, where the reflectivity can be fit by assuming that the refractive index N (N = n + ik) in the amorphous layer is constant. In SrTiO3, agreement between measurements made directly with Rutherford backscattering spectroscopy (RBS) and those made using TRR can be obtained only when N is permitted to vary within the amorphous layer, with nonzero values for both the real and imaginary components. In some cases, the roughness of the amorphous/crystalline interface must also be considered. Additionally, a model for H2O-enhanced epitaxial regrowth is presented, which is in good agreement with the shape of the depth-versus-time profiles that are obtained from the TRR data.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 12 , December 1994 , pp. 3113 - 3120
Copyright
Copyright © Materials Research Society 1994

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References

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