Published online by Cambridge University Press: 01 March 2006
Ferroelectric films are growing in significance as non-volatile memory devices, sensors, and microactuators. The stress state of the film, induced by processing or constraints such as the substrate, strongly affects device behavior. Thus, it is important to be able to model the coupled and constrained behavior of film material. This work presents a preliminary study of the application of micromechanical modeling to ferroelectric films. A self-consistent micromechanics model developed for bulk ferroelectrics is adapted for thin film behavior by incorporating several features of the microstructure, mechanical clamping by the substrate, residual stresses, and the crystallographic orientation of the film.