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Microstructure and properties of PbZr0.6Ti0.4O3 and PbZrO3 thin films deposited on template layers

Published online by Cambridge University Press:  31 January 2011

R. E. Koritala ,
M. T. Lanagan ,
N. Chen ,
G. R. Bai ,
Y. Huang  and
S. K. Streiffer
R. E. Koritala
Affiliation:
Energy Technology Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
M. T. Lanagan
Affiliation:
Energy Technology Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
N. Chen
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
G. R. Bai
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
Y. Huang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
S. K. Streiffer
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439–4838
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Abstract

Polycrystalline Pb(ZrxTi1−x)O3 thin films with x = 0.6 and 1.0 were deposited at low temperatures (450–525 °C) on (111)Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition. The films were characterized by x-ray diffraction, electron microscopy, and electrical measurements. The texture of the films could be improved by using one of two template layers: PbTiO3 or TiO2. Electrical properties, including dielectric constants, loss tangents, polarization, coercive field, and breakdown field, were also examined. PbZrO3 films on Pt/Ti/SiO2/Si with a pseudocubic (110) orientation exhibited an electric-field-induced transformation from the antiferroelectric phase to the ferroelectric phase. The effect of varying processing conditions on the microstructure and electrical properties of the films is discussed.

Type
Articles
Information
Journal of Materials Research , Volume 15 , Issue 9 , September 2000 , pp. 1962 - 1971
Copyright
Copyright © Materials Research Society 2000

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