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New approach in the monitoring and characterization of titanium nitride thin films

Published online by Cambridge University Press:  31 January 2011

S. Logothetidis
Affiliation:
Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
E. I. Meletis
Affiliation:
Mechanical Engineering Department, Materials Science and Engineering Program, Louisiana State University, Baton Rouge, Louisiana 70803
G. Kourouklis
Affiliation:
Physics Division, School of Technology, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece
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Abstract

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

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