Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Dynna, M.
and
Weatherly, G.C.
1994.
Twinning and the formation of the diamond hexagonal phase in Si-Ge short period superlattices.
Journal of Crystal Growth,
Vol. 142,
Issue. 3-4,
p.
315.
Pirouz, P.
Garg, A.
Ning, X. J.
Yang, J. W.
and
Xiao, S. Q.
1995.
High-Temperature Indentation of Natural Diamond and the Quest for Lonsdaleite.
MRS Proceedings,
Vol. 383,
Issue. ,
Müllner, P.
and
Pirouz, P.
1997.
A disclination model for the twin-twin intersection and the formation of diamond-hexagonal silicon and germanium.
Materials Science and Engineering: A,
Vol. 233,
Issue. 1-2,
p.
139.
Raffy, C
Furthm ller, J
and
Bechstedt, F
2002.
Properties of interfaces between cubic and hexagonal polytypes of silicon carbide.
Journal of Physics: Condensed Matter,
Vol. 14,
Issue. 48,
p.
12725.
Wang, S Q
and
Ye, H Q
2003.
First-principles study on the lonsdaleite phases of C, Si and Ge.
Journal of Physics: Condensed Matter,
Vol. 15,
Issue. 12,
p.
L197.
Kaiser, U.
Biskupek, J.
and
GÄrtner, K.
2003.
'Magic-size' GeSi and Si nanocrystals created by ion bombardment of hexagonal SiC; a molecular dynamics study.
Philosophical Magazine Letters,
Vol. 83,
Issue. 4,
p.
253.
Cahn, Robert W.
2003.
digital Encyclopedia of Applied Physics.
Wang, S Q
and
Ye, H Q
2003.
Ab initioelastic constants for the lonsdaleite phases of C, Si and Ge.
Journal of Physics: Condensed Matter,
Vol. 15,
Issue. 30,
p.
5307.
Kriven, Waltraud M.
Siah, Lay Foong
Schmücker, Martin
and
Schneider, Hartmut
2004.
High Temperature Microhardness of Single Crystal Mullite.
Journal of the American Ceramic Society,
Vol. 87,
Issue. 5,
p.
970.
Raffy, C.
Furthmüller, J.
Wagner, J.-M.
and
Bechstedt, F.
2004.
Ab initiostudy of structural and electronic properties of planar defects in Si and SiC.
Physical Review B,
Vol. 70,
Issue. 19,
Oliver, David J
Bradby, Jodie E
Williams, Jim S
Swain, Michael V
McGrouther, Damien
and
Munroe, Paul
2006.
Indentation-Induced Damage Mechanisms in Germanium.
MRS Proceedings,
Vol. 983,
Issue. ,
Vandeperre, L.J.
Giuliani, F.
Lloyd, S.J.
and
Clegg, W.J.
2007.
The hardness of silicon and germanium.
Acta Materialia,
Vol. 55,
Issue. 18,
p.
6307.
Oliver, D. J.
Bradby, J. E.
Williams, J. S.
Swain, M. V.
and
Munroe, P.
2009.
Rate-dependent phase transformations in nanoindented germanium.
Journal of Applied Physics,
Vol. 105,
Issue. 12,
Strauch, D.
2011.
New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors.
Vol. 44D,
Issue. ,
p.
451.
Malone, Brad D.
and
Cohen, Marvin L.
2012.
Electronic structure, equation of state, and lattice dynamics of low-pressure Ge polymorphs.
Physical Review B,
Vol. 86,
Issue. 5,
Müllner, Peter
2013.
Plastic deformation: Shearing mountains atom by atom.
Journal of Alloys and Compounds,
Vol. 577,
Issue. ,
p.
S96.
De, Amrit
and
Pryor, Craig E
2014.
Electronic structure and optical properties of Si, Ge and diamond in the lonsdaleite phase.
Journal of Physics: Condensed Matter,
Vol. 26,
Issue. 4,
p.
045801.
Vincent, Laetitia
Patriarche, Gilles
Hallais, Géraldine
Renard, Charles
Gardès, Cyrille
Troadec, David
and
Bouchier, Daniel
2014.
Novel Heterostructured Ge Nanowires Based on Polytype Transformation.
Nano Letters,
Vol. 14,
Issue. 8,
p.
4828.
Yaokawa, Ritsuko
Ohsuna, Tetsu
Hayasaka, Yuichiro
and
Nakano, Hideyuki
2016.
Multilayer Germanenes Formed in Zintl‐Phase CaGe2 by Fluoride Diffusion.
ChemistrySelect,
Vol. 1,
Issue. 17,
p.
5579.
Wang, Jianwei
and
Zhang, Yong
2016.
Topologic connection between 2-D layered structures and 3-D diamond structures for conventional semiconductors.
Scientific Reports,
Vol. 6,
Issue. 1,