Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-28T04:25:05.140Z Has data issue: false hasContentIssue false
  • English
  • Français

Orientation control of sol-gel-derived lead zirconate titanate film by addition of polyvinylpyrrolidone

Published online by Cambridge University Press:  01 April 2005

Gun-Tae Park ,
Chee-Sung Park ,
Jong-Jin Choi  and
Hyoun-Ee Kim
Gun-Tae Park
Affiliation:
School of Material Science and Engineering, Seoul National University, Seoul 151-742, Korea
Chee-Sung Park
Affiliation:
School of Material Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jong-Jin Choi
Affiliation:
School of Material Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyoun-Ee Kim*
Affiliation:
School of Material Science and Engineering, Seoul National University, Seoul 151-742, Korea
*
a) Address all correspondence to this author. e-mail: kimhe@snu.ac.kr
Get access

Abstract

Highly (100)- and (111)-oriented lead zirconate titanate (PZT) films with a thickness of 350 nm were deposited on platinized Si substrates through a single spinning of a PZT sol containing polyvinylpyrrolidone (PVP) as an additive. The crystallographic orientation of the film was strongly influenced by pyrolysis conditions after spin coating. When the spin-coated sol was pyrolyzed at temperatures above 320 °C for relatively long periods of time (>5 min), (111)-oriented film was formed after annealing at 700 °C for 10 min. On the other hand, when the same sol was pyrolyzed at 320 °C for short periods of time (<5 min), the film was strongly oriented to the (100) direction after annealing. Organic residues derived from PVP decomposition acted as nucleation sites for the (100) oriented grains during annealing after the pyrolysis. The effective d33 of the (100)-oriented PZT film (100 pC/N) was much higher than that of the (111)-oriented film (62 pC/N) with the same thickness.

Keywords

FilmPiezoelectricSol-gel
Type
Research Article
Information
Journal of Materials Research , Volume 20 , Issue 4 , April 2005 , pp. 882 - 888
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Du, X., Zheng, J., Belegundu, U. and Uchino, K.: Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary. Appl. Phys. Lett. 72, 2421 (1998).CrossRefGoogle Scholar
2. Taylor, D. and Damjanovic, D.: Piezoelectric properties of rhombohedral Pb(Zr,Ti)O3 thin films with (100), (111), and “random” crystallographic orientation. Appl. Phys. Lett. 76, 1615 (2000).CrossRefGoogle Scholar
3. Wood, V., Busch, J., Ramamurthi, S. and Swartz, S.: Guided-wave optical properties of sol-gel ferroelectric films. J. Appl. Phys. 71, 4557 (1992).CrossRefGoogle Scholar
4. Boikov, Y., Esayan, S., Ivanov, Z., Brorsson, G., Claeson, T., Lee, J. and Safari, A.: Epitaxial growth and properties of YBa2Cu3O x –Pb(Zr0.6Ti0.4)O3–YBa2Cu3O x trilayer structure by laser ablation. Appl. Phys. Lett. 61, 528 (1992).CrossRefGoogle Scholar
5. Tuttle, B., Voigt, J., Goodnow, D., Lamppa, D., Headley, T., Eatough, M., Zender, G., Nasby, R. and Rodgers, S.: Highly oriented, chemically prepared Pb(Zr,Ti)O3 thin films. J. Am. Ceram. Soc. 76, 1537 (1993).10.1111/j.1151-2916.1993.tb03936.xCrossRefGoogle Scholar
6. Kumar, C., Pascual, R. and Sayer, M.: Crystallization of sputtered lead zirconate titanate films by rapid thermal processing. J. Appl. Phys. 71, 864 (1992).CrossRefGoogle Scholar
7. Sakashita, Y., Ono, T., Segawa, H., Tominaga, K. and Okada, M.: Preparation and electrical properties of MOCVD-deposited PZT thin films. J. Appl. Phys. 69, 8352 (1991).CrossRefGoogle Scholar
8. Lappalainen, J., Frantti, J. and Lantto, V.: Electrical and mechanical properties of ferroelectric thin films laser ablated from a Pb0.97Nd0.02(Zr0.55Ti0.45)O3 target. J. Appl. Phys. 82, 3469 (1997).10.1063/1.365663CrossRefGoogle Scholar
9. Klee, M., Eusemann, R., Waser, R., Brand, W. and Hal, H.: Processing and electrical properties of Pb(Zr x Ti1–x )O3 (x = 0.2–0.75) films: Comparison of metallo-organic decomposition and sol-gel processes. J. Appl. Phys. 72, 1566 (1992).CrossRefGoogle Scholar
10. Brooks, K., Reaney, I., Klissurska, R., Huang, Y., Bursill, L. and Setter, N.: Orientation of rapid thermally annealed lead zirconate thin films on (111) Pt substrates. J. Mater. Res. 9, 2540 (1994).CrossRefGoogle Scholar
11. Chen, S. and Chen, I.: Temperature-time texture transition of Pb(Zr1−x ,Ti x )O3 thin films: I. Role of Pb-rich intermediate phases. J. Am. Ceram. Soc. 77, 2332 (1994).CrossRefGoogle Scholar
12. Takenaka, S. and Kozuka, H.: Sol-gel preparation of single-layer, 0.75 μm thick lead zirconate titanate films from lead nitrate-titanium and zirconium alkoxide solutions containing polyvinylpyrrolidone. Appl. Phys. Lett. 79, 3485 (2001).10.1063/1.1419042CrossRefGoogle Scholar
13. Park, G., Choi, J., Park, C., Lee, J. and Kim, H.: Piezoelectric and ferroelectric properties of 1-μm-thick lead zirconate titanate film fabricated by a double-spin-coating process. Appl. Phys. Lett. 85, 2322 (2004).10.1063/1.1794354CrossRefGoogle Scholar
14. Park, G., Choi, J., Ryu, J., Fan, H. and Kim, H.: Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method. Appl. Phys. Lett. 80, 4606 (2002).10.1063/1.1487901CrossRefGoogle Scholar
15. Lefki, K. and Dormans, G.: Measurement of piezoelectric coefficients of ferroelectric thin films. J. Appl. Phys. 76, 1764 (1994).10.1063/1.357693CrossRefGoogle Scholar
16. Kwok, C. and Desu, S.: Pyrochlore to perovskite phase transformation in sol-gel derived lead-zirconate-titanate thin films. Appl. Phys. Lett. 60, 1430 (1992).CrossRefGoogle Scholar
17. Du, X., Belegundu, U. and Uchino, K.: Crystal orientation dependence of piezoelectric properties in lead zirconate titanate: theoretical expectation for thin films. Jpn. J. Appl. Phys. 36, 5580 (1997).CrossRefGoogle Scholar