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Oxidation of Sn Thin Films to SnO2. Micro-Raman Mapping and X-ray Diffraction Studies

Published online by Cambridge University Press:  31 January 2011

Luigi Sangaletti
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Laura E. Depero
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Brigida Allieri
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Francesca Pioselli
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Elisabetta Comini
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Giorgio Sberveglieri
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
Marcello Zocchi
Affiliation:
Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica e Chimica per i Materiali, Università di Brescia, Via Valotti, 9–25133 Brescia, Italy
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Abstract

The oxidation of tin layers deposited onto alumina substrates is investigated with the aim to identify the different steps of the process and obtain information on the sample homogeneity, phase segregation, and degree of oxidation. It is shown that at least three phases coexist at 450 °C, Sn, SnO, and SnO2, and remarkable inhomogeneities, already visible at an optical inspection, are found in the thin film. A micro-Raman mapping of the layer shows that these inhomogeneities are related to the presence of different Sn oxidation states, as evidenced by the inhomogeneous distribution of SnO and SnOx Raman bands. The thin film becomes homogeneous after annealing treatments above 550 °C, where only the SnO2 cassiterite phase is detected.

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Articles
Copyright
Copyright © Materials Research Society 1998

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