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Plasma enhanced chemical vapor deposition of silicon nitride films from a metal-organic precursor

Published online by Cambridge University Press:  03 March 2011

David M. Hoffman ,
Sri Prakash Rangarajan ,
Satish D. Athavale ,
Shashank C. Deshmukh ,
Demetre J. Economou ,
Jia-Rui Liu ,
Zongshuang Zheng  and
Wei-Kan Chu
David M. Hoffman*
Affiliation:
Department of Chemistry, University of Houston, Houston, Texas 77204-5641
Sri Prakash Rangarajan
Affiliation:
Department of Chemistry, University of Houston, Houston, Texas 77204-5641
Satish D. Athavale
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4792
Shashank C. Deshmukh
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4792
Demetre J. Economou*
Affiliation:
Department of Chemical Engineering, University of Houston, Houston, Texas 77204-4792
Jia-Rui Liu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5932
Zongshuang Zheng
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5932
Wei-Kan Chu
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, Texas 77204-5932
*
a)Authors to whom correspondence should be addressed.
a)Authors to whom correspondence should be addressed.
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Abstract

Silicon nitride films are grown by plasma enhanced chemical vapor deposition from tetrakis(dimethylamido)silicon, Si(NMe2)4, and ammonia precursors at substrate temperatures of 200-400 °C. Backscattering spectrometry shows that the films are close to stoichiometric. Depth profiling by Auger electron spectroscopy shows uniform composition and no oxygen or carbon contamination in the bulk. The films are featureless by scanning electron microscopy under 100,000X magnification.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 9 , Issue 12 , December 1994 , pp. 3019 - 3021
Copyright
Copyright © Materials Research Society 1994

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References

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