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Preparation of wurtzitic AlN thin films with a novel crystallographic alignment on MgO substrates by molecular-beam epitaxy

Published online by Cambridge University Press:  31 January 2011

J. R. Heffelfinger ,
D. L. Medlin  and
K. F. McCarty
J. R. Heffelfinger
Affiliation:
Materials and Engineering Sciences Center, Sandia National Laboratories, P.O. Box 969, Livermore, California 94551
D. L. Medlin
Affiliation:
Materials and Engineering Sciences Center, Sandia National Laboratories, P.O. Box 969, Livermore, California 94551
K. F. McCarty
Affiliation:
Materials and Engineering Sciences Center, Sandia National Laboratories, P.O. Box 969, Livermore, California 94551
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Extract

Thin films of wurtzitic AlN have been deposited by molecular-beam epitaxy onto (001) oriented MgO substrates. The films are epitactic and align with the and the , as evidenced by transmission electron microscopy. This configuration, which matches a close-packed direction of the film and substrate, allows for growth of two symmetrically equivalent orientation variants of the AlN film. These variants are distinguished by a 90° rotation about the direction that is normal to the substrate surface. Each variant also aligns the and the to within 5° of being parallel to the (200)MgO. The microstructure of the AlN films and origins of these novel alignments are discussed.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 6 , June 1998 , pp. 1414 - 1417
Copyright
Copyright © Materials Research Society 1998

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References

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