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Single-crystal silicon films on glass

Published online by Cambridge University Press:  31 January 2011

Kishor P. Gadkaree ,
Kamal Soni ,
Shang-Cong Cheng  and
Carlo Kosik-Williams
Kishor P. Gadkaree*
Affiliation:
Corning Inc., Sullivan Park, Corning, New York 14831
Kamal Soni
Affiliation:
Corning Inc., Sullivan Park, Corning, New York 14831
Shang-Cong Cheng
Affiliation:
Corning Inc., Sullivan Park, Corning, New York 14831
Carlo Kosik-Williams
Affiliation:
Corning Inc., Sullivan Park, Corning, New York 14831
*
a)Address all correspondence to this author. e-mail: gadkareekp@corning.com
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Abstract

We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.

Keywords

Barrier layerElectromigrationSi
Type
Rapid Commnunications
Information
Journal of Materials Research , Volume 22 , Issue 9 , September 2007 , pp. 2363 - 2367
Copyright
Copyright © Materials Research Society 2007

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References

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