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Study of the reaction mechanism between electroless Ni–P and Sn and its effect on the crystallization of Ni–P

Published online by Cambridge University Press:  31 January 2011

Y. C. Sohn ,
Jin Yu ,
S. K. Kang ,
W. K. Choi  and
D. Y. Shih
Y. C. Sohn*
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-dong, Yusong-gu, Taejon, Korea
Jin Yu
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373–1 Kusong-dong, Yusong-gu, Taejon, Korea
S. K. Kang
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218/Route 134, Yorktown Heights, New York 10598
W. K. Choi
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218/Route 134, Yorktown Heights, New York 10598
D. Y. Shih
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218/Route 134, Yorktown Heights, New York 10598
*
a) e-mail: sonyc@kaist.ac.kr
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Abstract

The reaction mechanism between electroless Ni–P and Sn was investigated to understand the effects of Sn on solder reaction-assisted crystallization at low temperatures as well as self-crystallization of Ni–P at high temperatures. Ni3Sn4 starts to form in a solid-state reaction well before Sn melts. Heat of reaction for Ni3Sn4 was measured during the Ni–P and Sn reaction (241.2 J/g). It was found that the solder reaction not only promotes crystallization at low temperatures by forming Ni3P in the P-rich layer but also facilitates self-crystallization of Ni–P by reducing the transformation temperature and heat of crystallization. The presence of Sn reduces the self-crystallization temperature of Ni–P by about 10 °C. The heat of crystallization also decreases with an increased Sn thickness.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 18 , Issue 1 , January 2003 , pp. 4 - 7
Copyright
Copyright © Materials Research Society 2003

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References

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