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A study on H2 plasma treatment effect on a-IGZO thin film transistor

Published online by Cambridge University Press:  03 July 2012

Jihoon Kim ,
Seokhwan Bang ,
Seungjun Lee ,
Seokyoon Shin ,
Joohyun Park ,
Hyungtak Seo  and
Hyeongtag Jeon
Jihoon Kim
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Seokhwan Bang
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Seungjun Lee
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Seokyoon Shin
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Joohyun Park
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
Hyungtak Seo*
Affiliation:
Department of Materials Science & Engineering, Ajou University, Woncheon-Dong, Yeongtong-Gu, Suwon 443-739, Korea
Hyeongtag Jeon*
Affiliation:
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
*
a)Address all correspondence to these authors. e-mail: hseo@ajou.ac.kr
b)e-mail: hjeon@hanyang.ac.kr
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Abstract

We report the effect of H2 plasma treatment on amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT). The changes in electrical characteristics and stability of the a-IGZO TFT treated by H2 plasma were evaluated under thermal stress. Each device exhibited a change in the subthreshold swing, turn on voltage shift, and hysteresis depending on the amount of hydrogen atom. It was found that there occurred a decrease of oxygen deficiency and an increase of hydrogen content in channel layer and channel/dielectric interface with increasing treatment time. The proper hydrogen dose well passivated the oxygen vacancies; however, more hydrogen dose acted as excessive donors. The change of oxygen vacancy and total trap charge were explained by the activation energy from Arrhenius plot. Through this study, we found that the optimized H2 plasma treatment brings device stability by affecting oxygen vacancy and trap content in channel bulk and channel/dielectric interface.

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Articles
Information
Journal of Materials Research , Volume 27 , Issue 17: Focus Issue: Oxide Semiconductors , 14 September 2012 , pp. 2318 - 2325
Copyright
Copyright © Materials Research Society 2012

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References

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