Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T14:17:39.407Z Has data issue: false hasContentIssue false
  • English
  • Français

The surface morphological evolution of ultrathin SiC buffer layer grown on Si (100) substrate by atmospheric pressure chemical vapor deposition

Published online by Cambridge University Press:  09 August 2012

Biao Shi ,
Ming-Xing Zhu ,
Xue-Chao Liu ,
Jian-Hua Yang  and
Er-Wei Shi
Biao Shi
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; and Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
Ming-Xing Zhu
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China; and Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
Xue-Chao Liu*
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Jian-Hua Yang
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
Er-Wei Shi
Affiliation:
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
*
a)Address all correspondence to this author. e-mail: xcliu@mail.sic.ac.cn
Get access

Abstract

Ultrathin SiC buffer layers have been grown on Si (100) substrates by atmospheric pressure chemical vapor deposition. The evolution of buffer layer morphological properties as a function of carbonization parameters is investigated by atomic force microscopy. Based on the quantitative analysis of the dependences of void density, void depth, void width, and surface roughness on carbonization parameters, a buffer layer growth model is proposed, and the effects of carbonization parameters on buffer layer morphology are clarified. The void density is related to the carbonization temperature, temperature ramp-up rate, and C3H8 concentration by affecting the initial SiC nuclei density. The void size is evolved with processing time and mainly dependent on the carbonization temperature but slightly affected by C3H8 and H2. The buffer layer morphology is deteriorated with increasing H2 flow rate when the C3H8 concentration is fixed.

Keywords

carbonizationchemical vapor deposition (CVD)morphology
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 1: Focus Issue: Silicon Carbide – Materials, Processing and Devices , 14 January 2013 , pp. 113 - 119
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Ferro, G., Monteil, Y., Vincent, H., Thevenot, V., Tran, M.D., Cauwet, F., and Bouix, J.: Atomic force microscopy growth modeling of SiC buffer layers on Si (100) and quality optimization. J. Appl. Phys. 80(8), 4691 (1996).Google Scholar
Severino, A., D’Arrigo, G., Bongiorno, C., Scalese, S., La Via, F., and Foti, G.: Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates. J. Appl. Phys. 102(2), 023518 (2007).Google Scholar
Portail, M., Zielinski, M., Chassagne, T., Roy, S., and Nemoz, M.: Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates. J. Appl. Phys. 105(8), 083505 (2009).CrossRefGoogle Scholar
Nishino, S., Powell, J.A., and Will, H.A.: Production of large-area single-crystal wafers of cubic SiC for semiconductor-devices. Appl. Phys. Lett. 42, 460 (1983).CrossRefGoogle Scholar
Mogab, C.J. and Leamy, H.J.: Conversion of Si to epitaxial SiC by reaction with C2H2. J. Appl. Phys. 45, 1075 (1974).Google Scholar
Li, J.P. and Steckl, A.J.: Nucleation and void formation mechanisms in SiC thin-film growth on Si by carbonization. J. Electrochem. Soc. 142, 634 (1995).CrossRefGoogle Scholar
Stinespring, C.D. and Wormhoudt, J.C.: Surface studies relevant to silicon carbide chemical vapor deposition. J. Appl. Phys. 65, 1733 (1989).Google Scholar
Becourt, N., Cros, B., Ponthenier, J.L., Berjoan, R., Papon, A.M., and Jaussaud, C.: Characterization of the buffer layer in SiC heteroepitaxy. Appl. Surf. Sci. 68, 461 (1993).Google Scholar
Kim, H.J., Davis, R.F., Cox, X.B., and Linton, R.W.: Physical and chemical nature of films formed on Si (100) surfaces subjected to C2H4 at elevated temperatures. J. Electrochem. Soc. 134, 2269 (1987).Google Scholar
Cimalla, V., Karagodina, K.V., Pezoldt, J., and Eichhorn, G.: Growth of thin beta-SiC layers by carbonization of Si surfaces by rapid thermal processing. Mater. Sci. Eng., B 29, 170 (1995).Google Scholar
Ferro, G., Monteil, Y., Vincent, H., Cauwet, F., Bouix, J., Durupt, P., Olivier, J., and Bisaro, R.: Infrared kinetic study of ultrathin SiC buffer layers grown on Si (100) by reactive chemical vapour deposition. Thin Solid Films 278(1–2), 22 (1996).Google Scholar
Steckl, A.J. and Li, J.P.: Epitaxial-growth of beta-SiC on Si by RTCVD with C3H8 and SiH4. IEEE Trans. Electron Devices 39, 64 (1992).CrossRefGoogle Scholar
Kordina, O., Bjorketun, L.O., Henry, A., Hallin, C., Glass, R.C., Hultman, L., Sundgren, J.E., and Janzen, E.: Growth of 3C-SiC on on-axis Si (100) substrates by chemical vapor deposition. J. Cryst. Growth 154, 303 (1995).Google Scholar
Cimalla, V., Pezoldt, J., Ecke, G., Rossler, H., and Eichhorn, G.: Characterization of buffer layers for CVD. J. Phys. IV 5, 863 (1995).Google Scholar
Gupta, A., Sengupta, J., and Jacob, C.: An atomic force microscopy and optical microscopy study of various shaped void formation and reduction in 3C-SiC films grown on Si using chemical vapor deposition. Thin Solid Films 516(8), 1669 (2008).Google Scholar
Yoshinobu, T., Mitsui, H., Tarui, Y., Fuyuki, T., and Matsunami, H.: Heteroepitaxial growth of single crystalline 3C-SiC on Si substrates by gas source molecular beam epitaxy. J. Appl. Phys. 72(5), 2006 (1992).CrossRefGoogle Scholar
Bittencourt, C.: Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma. J. Phys. D: Appl. Phys. 32(19), 2478 (1999).Google Scholar
Zielinski, M., Ndiaye, S., Chassagne, T., Juillaguet, S., Lewandowska, R., Portail, M., Leycuras, A., and Camassel, J.: Strain and wafer curvature of 3C-SiC films on silicon: Influence of the growth conditions. Phys. Status Solidi A 204(4), 981 (2007).Google Scholar
Hens, P., Wagner, G., Hölzing, A., Hock, R., and Wellmann, P.: Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100). Thin Solid Films (2011, in press). doi:10.1016/j.tsf.2011.10.177.Google Scholar
Chen, Y.: Crystal growth of 3C-SiC on Si (100) substrate using HMDS single precursor by APCVD. Doctor degree, Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto, Japan (1999).Google Scholar