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Synthesis of AlN nanowires by nitridation of Ti3Si0.9Al0.1C2 solid solution

Published online by Cambridge University Press:  03 March 2011

H.B. Zhang ,
J. Zhang ,
Y.C. Zhou ,
Y.W. Bao  and
M.S. Li
H.B. Zhang
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
J. Zhang
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
Y.C. Zhou*
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
Y.W. Bao
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
M.S. Li
Affiliation:
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People’s Republic of China
*
a) Address all correspondence to this author. e-mail: yczhou@imr.ac.cn
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Abstract

This paper describes a new method to synthesize AlN nanowires by the nitridation of Ti3Si0.9Al0.1C2 solid solution. Single-crystalline AlN nanowires with the hexagonal wurtzite structure can be easily prepared using this method. In particular, the resulting AlN nanowires display a new growth orientation of 〈1011〉 besides 〈1000〉 and 〈0001〉. This work indicates that MN+1AXN compounds are promising raw reactants to synthesize one-dimensional (1D) nanostructures of nitrides and oxides.

Keywords

CeramicNanoscaleNitride
Type
Rapid Communications
Information
Journal of Materials Research , Volume 22 , Issue 3 , March 2007 , pp. 561 - 564
Copyright
Copyright © Materials Research Society 2007

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References

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