Hostname: page-component-cd9895bd7-lnqnp Total loading time: 0 Render date: 2024-12-28T00:47:11.157Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature dependence of the optical properties in p-Cd0.96Zn0.04Te single crystals

Published online by Cambridge University Press:  31 January 2011

H. Y. Lee ,
T. W. Kang  and
T. W. Kim
H. Y. Lee
Affiliation:
Department of Physics, Dongguk University, 3–26, Pildong, Chungku, Seoul 100–715, Korea
T. W. Kang*
Affiliation:
Department of Physics, Dongguk University, 3–26, Pildong, Chungku, Seoul 100–715, Korea
T. W. Kim
Affiliation:
Department of Physics, Kwangwoon University, 447–1 Wolgye-dong, Nowon-ku, Seoul 139–701, Korea
*
a)Address all correspondence to this author.twkang@cakra.dongguk.ac.kr
Get access

Abstract

Photoluminescence (PL) measurements were performed on p-Cd0.96Zn0.04Te single crystals to investigate the dependence of the excitons on temperature. The activation energies and the longitudinal acoustic parameters of the excitons were determined from the temperature dependence of the PL spectra and were in reasonable agreement with the theoretical calculations. These results can help improve understanding for the application of p-CdxZn1–xTe single crystals in optoelectronic devices.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 8 , August 2001 , pp. 2196 - 2199
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Critical Review in Solid State and Materials Sciences, edited by Greene, J.E. (CRC Press, New York, 1992), Vol. 17, pp. 477–506.Google Scholar
2Doty, E.P., Butler, J.F., Schetzina, J.F., and Bowers, K.A., J. Vac. Sci. Technol. B 10, 1418 (1992).CrossRefGoogle Scholar
3Dhese, K.A., Devine, P., Ashenford, D.E., Nicholls, J.E., Scott, C.G., Sands, D., and Lunn, B., J. Appl. Phys. 76, 5423 (1994).CrossRefGoogle Scholar
4Zhao, Q.X., Baron, T., Saminadayar, K., and Magnea, N., J. Appl. Phys. 79, 2070 (1996).Google Scholar
5Stadler, W., Hofmann, D.M., Alt, H.C., Muschik, T., Meyer, B.K., Weigel, E., Müller-Vogt, G., Salk, M., Rupp, E., and Benz, K.W., Phys. Rev. B 51, 10619 (1995).CrossRefGoogle Scholar
6Olego, D.J., Faurie, J.P., Sivananthan, S., and Raccah, P.M., Appl. Phys. Lett. 47, 1172 (1985).CrossRefGoogle Scholar
7Han, M.S., Kang, T.W., and Kim, T.W., J. Mater. Res. 14, 2778 (1999).CrossRefGoogle Scholar
8Feldman, R.D., Austin, R.F., Dayem, A.H., and Westerwick, E.H., Appl. Phys. Lett. 49, 797 (1986).CrossRefGoogle Scholar
9Chen, Y.F., Tsai, C.S., Chang, Y.H., and Chang, Y.M., Appl. Phys. Lett. 58, 493 (1991).Google Scholar
10Kim, M.D., Kang, T.W., Kim, J.M., Kim, H.K., Jeoung, Y.T., and Kim, T.W., J. Appl. Phys. 73, 4077 (1993).CrossRefGoogle Scholar
11Stanley, R.P., Hawdon, B.J., Hegarty, J., Feldman, R.D., and Austin, R.F., Appl. Phys. Lett. 58, 2972 (1991).CrossRefGoogle Scholar
12Butler, J.F., Lingren, C.L., and Doty, F.P., IEEE Trans. Nucl. Phys. 39, 605 (1992).Google Scholar
13Francou, J.M., Saminadayar, K., and Pautrat, J.L., Phys. Rev. B 41, 12035 (1990).Google Scholar
14Pankove, J.I., Optical Process in Semiconductors (Dover, New York, 1971).Google Scholar
15Taguchi, T., Shirafuji, J., and Inuishi, Y., Phys. Status Solidi B 68, 727 (1995).CrossRefGoogle Scholar
16Francou, J.M., Saminadayar, K., and Pautrat, J.L., Phys. Rev. B 41, 12035 (1990).CrossRefGoogle Scholar
17Shklovskii, B.I. and Efros, A.L., Electronic Properties of Doped Semiconductors (Nauka, Moskow, Russia, 1979).Google Scholar
18Kogan, Sh., Van Lien, N., and Shklovskii, B.I., Sov. Phys. JETP 51, 971 (1981).Google Scholar
19Schubert, E.F., Gobel, E.O., Horikoshi, Y., Ploog, K., and Queisser, H.J., Phys. Rev. B 30, 813 (1984).CrossRefGoogle Scholar
20Rudin, S., Reinecke, T.L., and Segall, B., Phys. Rev. B 42, 11218 (1990).CrossRefGoogle Scholar
21Semiconductors and Semimetals, edited by Williams, E.W. and Bebb, H.B. (Academic Press, New York, 1972), Vol. 8, p. 262.Google Scholar