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Thermal stability, microstructure, and electrical properties of atomic layer deposited Hf6Ta2O17 gate dielectrics

Published online by Cambridge University Press:  31 January 2011

D.H. Triyoso ,
Z. Yu ,
R. Gregory ,
K. Moore ,
P. Fejes  and
S. Schauer
D.H. Triyoso*
Affiliation:
Austin Silicon Technology Solutions (ASTS), Freescale Semiconductor Inc., Austin, Texas 78721
Z. Yu
Affiliation:
Wireless and Packaging Systems Laboratory (WPSL), Freescale Semiconductor Inc., Phoenix, Arizona 85284
R. Gregory
Affiliation:
Wireless and Packaging Systems Laboratory (WPSL), Freescale Semiconductor Inc., Phoenix, Arizona 85284
K. Moore
Affiliation:
Wireless and Packaging Systems Laboratory (WPSL), Freescale Semiconductor Inc., Phoenix, Arizona 85284
P. Fejes
Affiliation:
Wireless and Packaging Systems Laboratory (WPSL), Freescale Semiconductor Inc., Phoenix, Arizona 85284
S. Schauer
Affiliation:
Wireless and Packaging Systems Laboratory (WPSL), Freescale Semiconductor Inc., Phoenix, Arizona 85284
*
a)Address all correspondence to this author. e-mail: dina.triyoso@freescale.com
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Abstract

The intent of this work is to investigate thermal stability, microstructure, and electrical properties of thin Hf6Ta2O17 high-k gate dielectrics. X-ray diffraction and transmission electron microscopy analysis reveal that an as-deposited Hf6Ta2O17 film is amorphous with a ∼1-nm interfacial layer. After a 1000 °C anneal, the film is a mixture of orthorhombic-Hf6Ta2O17 and monoclinic HfO2 with a thicker interfacial layer. Uniform Hf and Ta Auger depth profiles are observed for as deposited and annealed films. Secondary ion mass spectrometry (SIMS) analysis shows Hf and Ta profiles are unchanged following the 1000 °C anneal, indicating good thermal stability. There is, however, a clear indication of Si up-diffusion into Hf6Ta2O17, particularly after annealing at 1000 °C. No Hf or Ta is found in the Si substrate. Well-behaved capacitance-voltage curves and low leakage current characteristics were obtained for Mo/ Hf6Ta2O17 capacitors for as-deposited and 1000 °C annealed films. A flatband voltage (Vfb) shift towards negative voltage is observed for the annealed film when compared to the as-deposited film, indicating the presence of more positive charge, or less negative charge. Furthermore, capacitance-voltage stress measurements were performed to study charge trapping behaviors. A smaller Vfb shift is observed for as deposited (<10 mV) versus the 1000 °C annealed (30-40 mV) Hf6Ta2O17, indicating more charge trapping after the high temperature anneal.

Keywords

Atomic layer depositionDielectricMicrostructure
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 10 , October 2007 , pp. 2856 - 2862
Copyright
Copyright © Materials Research Society 2007

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References

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