Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-28T00:54:11.515Z Has data issue: false hasContentIssue false

Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates

Published online by Cambridge University Press:  03 March 2011

Dashan Wang*
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
James J. Tunney
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Xiaomei Du
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Michael L. Post
Affiliation:
Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
Raynald Gauvin
Affiliation:
Department of Mining, Metals and Materials Engineering, McGill University, Montreal, Quebec, Canada H3A 2B2
*
a) Address all correspondence to this author. e-mail: dashan.wang@nrc.ca
Get access

Abstract

The SrFeO3/SiO2/Si thin film system has been studied using transmission electron microscopy (TEM). The thin films of SrFeO3 were grown by pulsed laser deposition onto silicon substrates with a SiO2 buffer layer at room temperature (RT) and 700 °C and subjected to annealing for various periods of time at temperature T = 700 °C. Transmission electron microscopy characterization showed that the microstructure of the film deposited at room temperature contained crystalline and amorphous layers. Silicon diffusion into SrFeO3 films occurred at the SiO2 interface for the samples deposited at 700 °C and for those films annealed at 700 °C. The silicon diffusion-induced interfacial reactions resulted in the phase transformations and the growth of complex crystalline and amorphous phases. The principal compositions of these phases were Sr(Fe,Si)12O19, SrOx and amorphous [Sr-Fe-O-Si].

Type
Articles
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Ichimura, K., Inoue, Y., and Yasumori, I.: Hydrogenation and hydrogenalysis of hydrocarbons on perovskite oxides, in Properties and Applications of Perovskite-Type Oxides, edited by Tejuca, L.G. and Fierro, J.L.G. (Marcel Dekker, New York, 1993), p. 235.Google Scholar
2Viswanathan, B.: Co oxidation and NO reduction on perovskite oxides, in Properties and Applications of Perovskite-Type Oxides, edited by Tejuca, L.G. and Fierro, J.L.G. (Marcel Dekker, New York, 1993), p. 271.Google Scholar
3Arakawa, T.: Perovskite oxides as solid state chemical sensors, in Properties and Applications of Perovskite-Type Oxides, edited by Tejuca, L.G. and Fierro, J.L.G. (Marcel Dekker, New York, 1993), p. 361.Google Scholar
4Williams, D.E.: Conduction and gas response of semiconductor gas sensors, in Solid State Gas Sensors, edited by Moseley, P.T. and Tofield, B.C. (The Adam Hilger Series on Sensors, Bristol and Philadelphia, 1987), p. 71.Google Scholar
5Eranna, G., Joshi, B.C., Runthala, D.P., and Gupta, R.P.: Oxide materials for development of integrated gas sensors—A comprehensive review. Crit. Rev. Solid State Mater. Sci. 29, 111 (2004).CrossRefGoogle Scholar
6Post, M.L., Tunney, J.J., Yang, D., Du, X., and Singleton, D.L.: Material chemistry of perovskite compounds as chemical sensors. Sens. Actuators, B 59, 190 (1999).CrossRefGoogle Scholar
7Tunney, J.J., Post, M.L., Du, X., and Yang, D.: Temperature dependence and gas-sensing response of conduction for mixed conducting SrFeyCozOx thin films. J. Electrochem. Soc. 149(6), H113 (2002).CrossRefGoogle Scholar
8Martinelli, G., Carotta, M.C., Ferroni, M., Sadaoka, Y., and Traversa, E.: Screen printed perovskite-type thick films as gas sensors for environmental monitoring. Sens. Actuators, B 55, 99 (1999).CrossRefGoogle Scholar
9Hodges, J.P., Short, S., Jorgensen, J.D., Xiong, X., Dabrowski, B., Mini, S.M., and Kimball, C.W.: Evolution of oxygen-vacancy ordered crystal structures in the perovskite series SrnFenO3n-1 (n = 2, 4, 8, and ∞), and the relationship to electronic and magnetic properties. J. Solid State Chem. 151, 190 (2000).CrossRefGoogle Scholar
10Takeda, Y., Kanno, K., Takada, T., Yamamoto, O., Takano, M., Nakayama, N., and Bando, Y.: Phase relation in the oxygen nonstoichiometric system, SrFeOx (2.5 <= x <= 3.0). J. Solid State Chem. 63, 237 (1986).CrossRefGoogle Scholar
11Post, M.L., Sanders, B.W., and Kennepohl, P.: Thin films of non- stoichiometric perovskites as potential oxygen sensors. Sens. Actuators, B 13–14, 272 (1993).CrossRefGoogle Scholar
12Tunney, J.J. and Post, M.L.: The electrical conductance of SrFeO2.5+x thin films. J. Electroceram. 5(1), 63 (2000).CrossRefGoogle Scholar
13Sahner, K., Moos, R., Matam, M., Tunney, J.J., and Post, M.L.: Hydrocarbon sensing with thick and thin film p-type conducting perovskite materials. Sens. Actuators, B 108, 102 (2005).CrossRefGoogle Scholar
14Barsan, N. and Weimar, U.: Conduction model of metal oxide gas sensors. J. Electroceram. 7, 143 (2001).CrossRefGoogle Scholar
15Xu, C., Tamaki, J., Miura, N., and Yamazoe, N.: Grain size effects on gas sensitivity of porous SnO2-based elements. Sens. Actuators, B 3, 147 (1991).CrossRefGoogle Scholar
16Williams, D.E. and Pratt, K.F.E.: Microstructure effects on the response of gas-sensitive resistors based on semiconducting oxides. Sens. Actuators, B 70, 214 (2000).CrossRefGoogle Scholar
17Wang, Z., Sasaki, T., Koshizaki, N., Tunney, J.J., and Post, M.L.: Crystallized SeFeO3-x films deposited by pulsed laser deposition without in-situ substrate heating. Thin Solid Films 437, 95 (2003).CrossRefGoogle Scholar
18Sanders, B.R., Yao, J., and Post, M.L.: Thin films of SrFeO2.5+x— Effect of preferred orientation on oxygen uptake, in Polycrystalline Thin Films: Structure, Texture, Properties and Applications, edited by Barmak, K., Parker, M.A., Floro, J.A., Sinclair, R. and Smith, D.A. (Mater. Res. Soc. Symp. Proc. 343, Pittsburgh, PA, 1994), p. 463.Google Scholar
19Tunney, J.J., Whitfield, P., Du, X., and Post, M.L.: Pulsed laser deposition, characterization and thermochemical stability of SrFeyCo1-yOx thin films. Thin Solid Films 42, 221 (2003).CrossRefGoogle Scholar
20Moos, R., Rettig, F., Hürland, A., and Plog, C.: Temperature-independent resistive oxygen exhaust gas sensor for lean-burn engines in thick- film technology. Sens. Actuators, B 93, 43 (2003).CrossRefGoogle Scholar
21Litzelman, S.J., Rothschild, A., and Tuller, H.L.: The electrical properties and stability of SrTi0.65Fe0.35O3−δ thin films for automotive oxygen sensor applications. Sens. Actuators, B 108, 231 (2005).CrossRefGoogle Scholar
22Chen, X.F., Lu, H., Zhu, W.G., and Tan, O.K.: Enhanced field emission of silicon tips coated with sol–gel-derived (Ba0.65Sr0.35)TiO3 thin film. Surf. Coat. Technol. 198, 266 (2005).CrossRefGoogle Scholar
23Oh, S.H. and Park, C-G.: Nanoscale characterization of interfacial reactions in SrRuO3 thin film on Si substrate. Surf. Interface Anal. 31, 796 (2001).CrossRefGoogle Scholar
24Lu, X.B., Zhang, X., Huang, R., Lu, H.B., Chen, Z.H., Xiang, W.F., He, M., Cheng, B.L., Zhou, H.W., Wang, X.P., Wang, C.Z., and Nguyen, B.Y.: Thermal stability of LaAlO3/Si deposited by laser molecular-beam epitaxy. Appl. Phys. Lett. 84, 2620 (2004).CrossRefGoogle Scholar
25Lu, X.B., Liu, Z.G., Shi, G.H., Ling, H.Q., Zhou, H.W., Wang, X.P., and Nguyen, B.Y.: Interfacial structures of LaAlO3 films on Si(100) substrates. Appl. Phys. A. Mater. Sci. Process. 78, 921 (2004).CrossRefGoogle Scholar
26He, J.Q., Jia, C.L., Vaithyanathan, V., Schlom, D.G., Schubert, J., Gerber, A., Kohlstedt, H.H., and Wang, R.H.: Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates. J. Appl. Phys. 97, 104921 (2005).CrossRefGoogle Scholar
27Grudin, O., Minescu, R., Landsberger, L.M., Kahrizi, M., Frolov, G., Cheeke, J.D.N., Chehab, S., Post, M., Tunney, J., Du, X., Yang, D., and Segall, D.: High-temperature gas sensor using perovskite thin films on a suspended microheater. J. Vac. Sci. Technol. A 20(3), 1100 (2002).CrossRefGoogle Scholar
28Ohring, M.: Material Science of Thin Films, 2nd ed. (Academic Press, San Diego, 2002), p. 682.Google Scholar
29Fork, D.K.: Epitaxial oxides on semiconductors, in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D.B. and Hubler, G.K. (John Wiley and Sons, Inc., New York, 1994), Chap. 16.Google Scholar
30Goodhew, P.J.: Specimen Preparation for Transmission Electron Microscopy of Materials (Oxford; New York: Oxford University Press; Oxford: Royal Microscopical Society, 1984).Google Scholar
31Ivey, D.G. and Piercy, G.R.: Cross-sectional TEM specimens of metal contacts to semiconductors. J. Electron Micr. Tech. 8, 233 (1988).CrossRefGoogle ScholarPubMed
32Rao, C.N.R., Gopalakrishnan, J., and Vidyasagar, K.: Superstructures, ordered defects, and nonstoichiometry in metal oxides of perovskite and related structures. Indian J. Chem. 23A, 265 (1984).Google Scholar
33Sorensen, O.T.: Thermodynamics and defect structure of nonstoichiometric oxides, in Nonstoichiometric Oxides, edited by Sorensen, O.T. (Academic Press, New York, 1981), Chap. 1, p. 1.Google Scholar
34Eyring, LeRoy: Structure, defects, and nonstoichiometry in oxides: An electron microscopic view, in Nonstoichiometric Oxides, edited by Sorensen, O.T. (Academic Press, New York, 1981), p. 338.Google Scholar
35Anderson, J.S.: The real structure of defect solids, in Defects and Transport in Oxides, edited by Seltzer, M.S. and Jaffe, R.I. (Plenum Press, New York, 1974), p. 25.CrossRefGoogle Scholar
36Tilley, R.J.D.: Defect crystal chemistry and its applications, in Chemical Physics of Solids and Their Surfaces, Vol. 8, edited by Roberts, M.W. and Thomas, J.M. (Royal Society of Chemistry, London, 1980), p. 121.Google Scholar
37Rao, C.N.R. and Rao, G.V. Subba: Electrical conduction in metal oxides. Phys. Status Solidi. A1, 597 (1970).CrossRefGoogle Scholar