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Y1Ba2Cu3O7–x multilayer structures with a thick SiO2 interlayer for multichip modules

Published online by Cambridge University Press:  31 January 2011

S. Afonso ,
K. Y. Chen ,
Q. Xiong ,
Y. Q. Tang ,
G. J. Salamo ,
F. T. Chan ,
J. Cooksey ,
S. Scott ,
Y. J. Shi  and
S. Ang
...Show all authors
S. Afonso
Affiliation:
Department of Physics/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
K. Y. Chen
Affiliation:
Department of Physics/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
Q. Xiong
Affiliation:
Department of Physics/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
Y. Q. Tang
Affiliation:
Department of Physics/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
G. J. Salamo
Affiliation:
Department of Physics/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
F. T. Chan
Affiliation:
Department of Physics/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
J. Cooksey
Affiliation:
Department of Electrical Engineering/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
S. Scott
Affiliation:
Department of Electrical Engineering/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
Y. J. Shi
Affiliation:
Department of Electrical Engineering/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
S. Ang
Affiliation:
Department of Electrical Engineering/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
W. D. Brown
Affiliation:
Department of Electrical Engineering/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
L. W. Schaper
Affiliation:
Department of Electrical Engineering/HiDEC, University of Arkansas, Fayetteville, Arkansas 72701
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Abstract

For high temperature superconducting multichip modules and other related electronic applications, it is necessary to be able to fabricate several Y1Ba2Cu3O7–x (YBCO) layers separated by thick low dielectric constant dielectric layers. In this work, we report the successful fabrication of YBCO/YSZ/SiO2 (1–2 μm)/YSZ/YBCO multilayer structures on single crystal yttria stabilized zirconia (YSZ) substrates. In contrast to previously reported work, the top YBCO layer did not show any cracking. This is due to a technique that allows for stress relief in the SiO2 layer before the second YBCO layer is deposited. The top YBCO layer in our multilayer structure had Tc = 87 K and Jc = 105 A/cm2 (at 77 K), whereas the bottom YBCO layer had Tc = 90 K and Jc = 1.2 × 106 A/cm2 (at 77 K). We also showed that the quality of the bottom YBCO layer was preserved during the fabrication of the multilayer due to the annealing process during which O2 diffused into the YBCO, replacing the O2 lost during the deposition of the top YBCO layer.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 11 , November 1997 , pp. 2947 - 2951
Copyright
Copyright © Materials Research Society 1997

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