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Advances in the growth and characterization of Ge quantum dots and islands

Published online by Cambridge University Press:  01 December 2005

J-M. Baribeau ,
N.L. Rowell  and
D.J. Lockwood
J-M. Baribeau*
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
N.L. Rowell
Affiliation:
Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
D.J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada
*
a)Address all correspondence to this author. e-mail: jean-marc.baribeau@nrc-cnrc.gc.ca This paper was selected as the Outstanding Meeting Paper for the 2004 MRS Fall Meeting Symposium F Proceedings, Vol. 832.
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Abstract

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

Keywords

EpitaxyNanoscaleSemiconductor
Type
Outstanding Meeting Paper—Review
Information
Journal of Materials Research , Volume 20 , Issue 12 , December 2005 , pp. 3278 - 3293
Copyright
Copyright © Materials Research Society 2005

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