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Air oxidation of undoped and B-doped polycrystalline diamond films at high temperature

Published online by Cambridge University Press:  31 January 2011

Koichi Miyata  and
Koji Kobashi
Koichi Miyata
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651–22, Japan
Koji Kobashi
Affiliation:
Kobe Steel, Ltd., Electronics Research Laboratory, 1-5-5 Takatsuka-dai, Nishi-ku, Kobe 651–22, Japan
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Abstract

Air oxidation of undoped and B-doped polycrystalline diamond films was investigated at temperatures between 500 and 700 °C. Diamond (111) facets were etched for both undoped and B-doped films after 1 h at 700 °C. The etching rate of (111) facet due to oxidation was approximately 50% lower by B-doping of 1 × 1019 cm−3, presumably because of the decrease of sp2 bands and lattice defects that were identified by Raman and photoluminescence spectroscopy. X-ray photoelectron and electron energy loss spectroscopy revealed that by the high temperature treatment, the diamond surface was initially converted into graphite and successively etched by oxygen.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 2 , February 1996 , pp. 296 - 304
Copyright
Copyright © Materials Research Society 1996

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