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An analysis of high temperature (1150 °C) furnace annealing of buried oxide wafers formed by ion implantation

Published online by Cambridge University Press:  31 January 2011

S. R. Wilson ,
M. E. Burnham ,
M. Kottke ,
R. P. Lorigan ,
S. J. Krause ,
C. O. Jung ,
J. A. Leavitt ,
L. C. McIntyre Jr. ,
J. Seerveld  and
P. Stoss
S. R. Wilson
Affiliation:
Semiconductor Research and Development Laboratories, Semiconductor Products Sector, Motorola, Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
M. E. Burnham
Affiliation:
Semiconductor Research and Development Laboratories, Semiconductor Products Sector, Motorola, Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
M. Kottke
Affiliation:
Semiconductor Research and Development Laboratories, Semiconductor Products Sector, Motorola, Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
R. P. Lorigan
Affiliation:
Semiconductor Research and Development Laboratories, Semiconductor Products Sector, Motorola, Inc., 5005 East McDowell Road, Phoenix, Arizona 85008
S. J. Krause
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287
C. O. Jung
Affiliation:
Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287
J. A. Leavitt
Affiliation:
Department of Physics, University of Arizona, Tucson, Arizona 85721
L. C. McIntyre Jr.
Affiliation:
Department of Physics, University of Arizona, Tucson, Arizona 85721
J. Seerveld
Affiliation:
Department of Physics, University of Arizona, Tucson, Arizona 85721
P. Stoss
Affiliation:
Department of Physics, University of Arizona, Tucson, Arizona 85721
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Abstract

Silicon-on-insulator films were formed by ion implantation of oxygen and were treated with various annealing cycles at peak temperatures of 1150 °C, 1200 °C, and 1250 °C in a conventional diffusion furnace. The objective of this study was to examine the structural effects on samples with similar oxygen diffusion lengths (from 17 to 33 μm) achieved by annealing at different times and temperatures. The oxygen and silicon distributions, as well as the residual damage and precipitate size and distribution, were measured by Auger electron microscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy. In agreement with previous findings, higher temperatures produced a larger and less defective, “precipitate-free” superficial Si region. The buried oxide layer thickened from 0.33 μm to a maximum of 0.43 μm as some precipitates were incorporated into the buried oxide while others adjacent to the buried oxide grew in size (up to 47 nm) and decreased in relative number. A new result of this systematic study of annealing conditions was that the peak temperature has a greater effect on the morphology and crystal quality of the superficial Si structure than does time at temperature. Structural changes for longer anneals at 1150 °C are not equivalent to shorter anneals at 1250 °C even though the diffusion length of oxygen for these treatments is the same.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 1 , February 1989 , pp. 167 - 176
Copyright
Copyright © Materials Research Society 1989

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