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An effective Cu-Sn barrier layer for Au bump used in optoelectronic devices

Published online by Cambridge University Press:  03 March 2011

C.Y. Liu  and
S.J. Wang
C.Y. Liu*
Affiliation:
Department of Chemical Engineering and Materials Engineering, National Central University, Chung-Li, Taiwan, Republic of China
S.J. Wang
Affiliation:
Department of Chemical Engineering and Materials Engineering, National Central University, Chung-Li, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: chengyi@cc.ncu.edu.tw
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Abstract

By studying reactions between Au foils and Sn(Cu) alloys, we found that the Au consumption rate depended on the Cu-content of the Sn(Cu) solders. The higher Cu-content alloys had faster Au consumption rates. When the Au foil was pre-coated with a Ni layer and then reacted with Sn(Cu) alloys having a Cu-content of morethen 1.5 wt%, a stable ternary (Cu,Ni)6Sn5 compound layer was observed on theAu foil. This ternary compound layer then served as a barrier layer that effectively prevented the Au foil from reacting with the molten solder. This result enabled the implementation of a flip-chip assembly process for the fabrication of optoelectronic devices.

Keywords

Packaging
Type
Rapid Communications
Information
Journal of Materials Research , Volume 19 , Issue 9 , September 2004 , pp. 2536 - 2540
Copyright
Copyright © Materials Research Society 2004

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References

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