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An irreversible disappearance of the mechanical loss peak of an yttria-doped silicon nitride

Published online by Cambridge University Press:  03 March 2011

T. Akatsu*
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
Y. Kawakami
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
Y. Tanabe
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
E. Yasuda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
K. Yamada
Affiliation:
Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1131, Japan
N. Kamiya
Affiliation:
Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1131, Japan
*
a) Address all correspondence to this author.e-mail: Takashi_Akatsu@msl.titech.ac.jp
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Abstract

The internal friction of a silicon nitride with a sintering aid of yttrium oxide was measured from room temperature to 1400 °C. A mechanical loss peak was typically observed at 1000 °C on heating the as-sintered specimen; however, it disappeared on cooling. Also, the peak was not observed upon heating a specimen that had been heated above 1400 °C. When we carried out thermal cycling, raising terminal temperatures from 1050 to 1400 °C, the integrated intensity of the peak gradually decreased due to the progressive crystallization of a grain-boundary amorphous phase.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2004

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References

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