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An irreversible disappearance of the mechanical loss peak of an yttria-doped silicon nitride

Published online by Cambridge University Press:  03 March 2011

T. Akatsu*
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
Y. Kawakami
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
Y. Tanabe
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
E. Yasuda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta 4259, Midori, Yokohama 226-8503, Japan
K. Yamada
Affiliation:
Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1131, Japan
N. Kamiya
Affiliation:
Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1131, Japan
*
a) Address all correspondence to this author.e-mail: Takashi_Akatsu@msl.titech.ac.jp
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Abstract

The internal friction of a silicon nitride with a sintering aid of yttrium oxide was measured from room temperature to 1400 °C. A mechanical loss peak was typically observed at 1000 °C on heating the as-sintered specimen; however, it disappeared on cooling. Also, the peak was not observed upon heating a specimen that had been heated above 1400 °C. When we carried out thermal cycling, raising terminal temperatures from 1050 to 1400 °C, the integrated intensity of the peak gradually decreased due to the progressive crystallization of a grain-boundary amorphous phase.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1.Mosher, D.R., Raj, R. andKossowsky, R.: Measurement of viscosity of the grain-boundary phase in hot-pressed silicon nitride. J. Mater. Sci. 11 49 (1976).CrossRefGoogle Scholar
2.Tsai, R.L. andRaj, R.: The role of grain-boundary sliding in fracture of hot-pressed Si3N4 at high temperatures. J. Am. Ceram. Soc. 63 513 (1980).CrossRefGoogle Scholar
3.Sakaguchi, S., Murayama, N. andWakai, F.: Internal friction of Si3N4 at elevated temperatures. Yogyo-Kyokai-Shi. 95 1219 (1987).CrossRefGoogle Scholar
4.Lakki, A., Schaller, R., Bernard-Granger, G. andDuclos, R.: High temperature anelastic behaviour of silicon nitride studied by mechanical spectroscopy. Acta Metall. Mater. 43 419 (1995).CrossRefGoogle Scholar
5.Pezzotti, G., Ota, K. andKleebe, H-J.: Grain-boundary relaxation in high-purity silicon nitride. J. Am. Ceram. Soc. 79 2237 (1996).CrossRefGoogle Scholar
6.Yoon, S.Y., Kashimura, H., Akatsu, T., Tanabe, Y., Yamada, S. andYasuda, E.: Grain size dependency on the creep rate in hot-pressed silicon nitride. J. Ceram. Soc. Jpn. 104 939 (1996).CrossRefGoogle Scholar
7.Ota, K. andPezzotti, G.: Internal friction study of sialon ceramics. Philos. Mag. A 73 223 (1996).CrossRefGoogle Scholar
8.Pezzotti, G., Maruyama, K., Ota, K., Kleebe, H-J. andNishida, T.: Viscous slip at grain boundaries in highly covalent ceramics. Ceram. Eng. Sci. Proc. 18 67 (1997).CrossRefGoogle Scholar
9.Pezzotti, G. andOta, K.: Anelastic grain-boundary sliding in ceramics. II. Polycrystals with glassy boundaries. J. Phys. IV 6 357 (1996).Google Scholar
10.Kleebe, H-J. andPezzotti, G.: Transmission electron microscopy in conjunction with internal friction measurements—A powerful tool for characterization of ceramic interfaces. J. Ceram. Soc. Jpn. 107 801 (1999).CrossRefGoogle Scholar
11.Pezzotti, G., Wakasugi, T., Nishida, T., Ota, R., Kleebe, H-J. andOta, K.: Chemistry and inherent viscosity of glasses segregated at grain boundaries of silicon nitride and silicon carbide ceramics. J. Non-Cryst. Solids 271 79 (2000).CrossRefGoogle Scholar
12.Roebben, G., Donzel, L., Stemmer, S., Steen, M., Schaller, R. andVan Der Biest, O.: Viscous energy dissipation at high temperatures in silicon nitride. Acta Mater. 46 4711 (1998).CrossRefGoogle Scholar
13.Stemmer, S., Roebben, G. andVan Der Biest, O.: Evolution of grain boundary films in liquid phase sintered silicon nitride during high temperature testing. Acta Mater. 46 5599 (1998).CrossRefGoogle Scholar
14.Schaller, R.: Mechanical spectroscopy of the high-temperature brittle-to-ductile transition in ceramics and cermet. J. Alloys Compd. 310 7 (2000).CrossRefGoogle Scholar
15.Roebben, G., Duan, R-G., Sciti, D. andVan Der Biest, O.: Assessment of the high temperature elastic and damping properties of silicon nitrides and carbides with the impulse excitation technique. J. Eur. Ceram. Soc. 22 2501 (2002).CrossRefGoogle Scholar
16.Tsuge, A., Nishida, K. andKomatsu, M.: Effect of crystallizing the grain-boundary glass phase on the high-temperature strength of hot-pressed Si3N4 containing Y2O3. J. Am. Ceram. Soc. 58 323 (1975).CrossRefGoogle Scholar
17.Clarke, D.R.: On the equilibrium thickness of intergranular glass phases in ceramic materials. J. Am. Ceram. Soc. 70 15 (1987).CrossRefGoogle Scholar
18.Clarke, D.R., Shaw, T.M., Philipse, A.P. andHorn, R.G.: Possible electrical double-layer contribution to the equilibrium thickness of intergranular glass films in polycrystalline ceramics. J. Am. Ceram. Soc. 76 1201 (1993).CrossRefGoogle Scholar