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Analysis of the fluoride effect on the phase-selective growth of TlBa2Ca2Cu3O9−x thin films: Phase evolution and microstructure development

Published online by Cambridge University Press:  31 January 2011

Richard J. McNeely ,
John A. Belot ,
Tobin J. Marks ,
Yanguo Wang ,
Vinayak P. Dravid ,
Michael P. Chudzik  and
Carl R. Kannewurf
Richard J. McNeely
Affiliation:
Department of Chemistry and the Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208–3113
John A. Belot
Affiliation:
Department of Chemistry and the Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208–3113
Tobin J. Marks
Affiliation:
Department of Chemistry and the Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208–3113
Yanguo Wang
Affiliation:
Department of Materials Science and Engineering and the Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208–3108
Vinayak P. Dravid
Affiliation:
Department of Materials Science and Engineering and the Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208–3108
Michael P. Chudzik
Affiliation:
Department of Electrical and Computer Engineering and the Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208–3118
Carl R. Kannewurf
Affiliation:
Department of Electrical and Computer Engineering and the Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208–3118
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Abstract

Phase-selective growth of TlBa2Ca2Cu3O9−x films is greatly enhanced by annealing chemical vapor deposition derived BaCaCuO(F) precursor films in the presence of TlF. Nucleation of superconducting phases (≥840 °C under O2) progresses in the order 2212 → 2223 → 1212 → 1223. Annealing at 855 °C results in well-defined platelet grains, a significant number of which are a-axis oriented. Residual fluoride is not detectable at any stage of the annealing process. Thin films synthesized by TlF annealing differ markedly from films processed in the presence of Tl2O3 with Tc = 103 K and Jc > 105 A/cm2 (5 K, 4.5 T).

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Articles
Information
Journal of Materials Research , Volume 15 , Issue 5 , May 2000 , pp. 1083 - 1097
Copyright
Copyright © Materials Research Society 2000

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