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Atomic diffusion mediated by intrinsic point defects in GaAs and AlxGa1−xAs–GaAs superlattices

Published online by Cambridge University Press:  31 January 2011

Hidehiko Iguchi
Hidehiko Iguchi
Affiliation:
Canon Inc. Research Center, 5-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa-ken 243-01, Japan
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Abstract

Point-defect-mediated atomic diffusion in GaAs and AlxGa1−xAs–GaAs superlattices is examined thermodynamically by focusing on activation enthalpy of diffusion. Through a review of available experimental results of impurity diffusion of Si, Zn, and Be, their diffusion phenomena are discussed by taking the characteristics of column-III-site-related point defect, such as Ga vacancy and arsenic-antisite, into consideration. It is suggested that Zn and Be diffusion should be mediated by As-antisite defects. On the other hand, Si diffusion is mediated by either Ga vacancy or As-antisite, depending on the growth method of materials and diffusion conditions. It is argued that As-antisite should be a mediator of diffusion in As-antisite-rich materials and with using As-rich diffusion source under p-type conditions. Cation self-diffusion or interdiffusion is also discussed in the same manner. Impurity-enhanced layer-disordering phenomena are examined by considering the reduction of defect energy of Ga vacancy and As antisite under n-type and p-type conditions, respectively. Beryllium enhanced and suppressed interdiffusion (cation self-diffusion) in MBE-grown AlxGa1−xAs–GaAs superlattices are interpreted in view of point-defect-mediated cation diffusion on the basis of the Fermi-energy dependence of point defect. In order to explain the phenomena, crystal-growth methods and surface-localized point defects which is responsible for Fermi-level stabilization are taken into consideration.

Type
Articles
Information
Journal of Materials Research , Volume 6 , Issue 7 , July 1991 , pp. 1542 - 1552
Copyright
Copyright © Materials Research Society 1991

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