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Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

Published online by Cambridge University Press:  01 November 2004

Titta Aaltonen ,
Mikko Ritala ,
Yung-Liang Tung ,
Yun Chi ,
Kai Arstila ,
Kristoffer Meinander  and
Markku Leskelä
Titta Aaltonen*
Affiliation:
Department of Chemistry, University of Helsinki, FIN-00014 Helsinki, Finland
Mikko Ritala
Affiliation:
Department of Chemistry, University of Helsinki, FIN-00014 Helsinki, Finland
Yung-Liang Tung
Affiliation:
Department of Chemistry, National Tsing Huang University, Hsinchu 30013, Taiwan
Yun Chi
Affiliation:
Department of Chemistry, National Tsing Huang University, Hsinchu 30013, Taiwan
Kai Arstila
Affiliation:
Department of Physical Sciences, University of Helsinki, FIN-00014 Helsinki, Finland
Kristoffer Meinander
Affiliation:
Department of Physical Sciences, University of Helsinki, FIN-00014 Helsinki, Finland
Markku Leskelä
Affiliation:
Department of Chemistry, University of Helsinki, FIN-00014 Helsinki, Finland
*
a) Address all correspondence to this author. e-mail: titta.aaltonen@helsinki.fi
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Abstract

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Keywords

Metallic conductorMicroelectronicsThin film
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 11 , November 2004 , pp. 3353 - 3358
Copyright
Copyright © Materials Research Society 2004

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