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The atomic structure of growth interfaces in Y–Ba–Cu–O thin films

Published online by Cambridge University Press:  31 January 2011

R. Ramesh ,
A. Inam ,
D.M. Hwang ,
T.S. Ravi ,
T. Sands ,
X.X. Xi ,
X.D. Wu ,
Q. Li ,
T. Venkatesan  and
R. Kilaas
R. Ramesh
Affiliation:
Bellcore, Red Bank, New Jersey 07701
A. Inam
Affiliation:
Bellcore, Red Bank, New Jersey 07701
D.M. Hwang
Affiliation:
Bellcore, Red Bank, New Jersey 07701
T.S. Ravi
Affiliation:
Bellcore, Red Bank, New Jersey 07701
T. Sands
Affiliation:
Bellcore, Red Bank, New Jersey 07701
X.X. Xi
Affiliation:
Rutgers University, Piscataway, New Jersey 08854
X.D. Wu
Affiliation:
Rutgers University, Piscataway, New Jersey 08854
Q. Li
Affiliation:
Rutgers University, Piscataway, New Jersey 08854
T. Venkatesan
Affiliation:
Rutgers University, Piscataway, New Jersey 08854
R. Kilaas
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, Berkeley, California 94720
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Abstract

We have examined the atomic structure of growth interfaces in thin films of Y–Ba–Cu–O grown on [001] perovskite or cubic substrates. At substrate heater temperatures in the range of 780–820 °C c-axis oriented growth is observed on these substrates. On SrTiO3, the first layer appears to be either a BaO or a CuO2 plane while on LaAlO3 the first layer appears to be a CuO chain layer. The mismatch on the a-b plane is accommodated by the formation of interface dislocations. Defects on the substrate surface propagate as defects in the film. These defects are primarily translational boundaries and in some cases second phases. At lower substrate heater temperatures, i.e., 650–700 °C, a, b-axis growth dominates. Defects and steps on the substrate surface are more detrimental in the growth of a, b-axis oriented films, since they tend to favor the nucleation of c-axis oriented domains. This is ascribed to the ledge mechanism of c-axis film growth, for which the surface steps are good nucleation sites.

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Articles
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Journal of Materials Research , Volume 6 , Issue 11 , November 1991 , pp. 2264 - 2271
Copyright
Copyright © Materials Research Society 1991

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