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Barrierless Cu–Ni–Nb thin films on silicon with high thermal stability and low electrical resistivity

Published online by Cambridge University Press:  20 December 2013

Xiao Na Li ,
Li Rong Zhao ,
Zhen Li ,
Li Jun Liu ,
Cui Min Bao ,
Jinn P. Chu  and
Chuang Dong
Xiao Na Li*
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
Li Rong Zhao
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
Zhen Li*
Affiliation:
School of Mechanical Engineering, Dalian University of Technology, Dalian 116024, China
Li Jun Liu
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
Cui Min Bao
Affiliation:
Shenyang Blower Works Group, Ltd., Shenyang 110142, China
Jinn P. Chu
Affiliation:
Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
Chuang Dong
Affiliation:
Key Laboratory of Materials Modification by Laser, School of Mechanical Engineering, Dalian University of Technology, Ministry of Education, Dalian 116024, China
*
a)Address all correspondence to this author. e-mail: lixiaona@dlut.edu.cn
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Abstract

In this paper, we demonstrate a thin film Cu–Ni–Nb alloy deposited directly on silicon, without a designated barrier, showing very high thermal stability at a temperature up to 700 °C for 1 h. Thin [Nb–Ni12]Cux films were sputter deposited and annealed, and their material and electrical properties were studied. The results can be explained by the “cluster-plus-glue atom” model for stable solid solutions, where [Nb–Ni12] cuboctahedral clusters are embedded in a Cu matrix. In this model, the clusters are congruent with the Cu minimizing atomic interactions allowing a good stability. The properties of the films were found to be affected by the Ni/Nb ratios. Especially, the (Nb1.2/13.2Ni12/13.2)0.3Cu99.7 film annealed at 500 °C for 1 h had the lowest electrical resistivity of about 2.7 μΩ cm. And even after 40 h annealing at 500 °C, it maintained a low resistivity of about 2.8 μΩ cm, demonstrating extremely high stabilities against silicide formation.

Keywords

Cufilmelectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 24 , 28 December 2013 , pp. 3367 - 3373
Copyright
Copyright © Materials Research Society 2013 

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References

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