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Calculated phase diagrams for activated low pressure diamond growth from C–H, C–O, and C–H–O systems

Published online by Cambridge University Press:  31 January 2011

Ji-Tao Wang
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Yong-Zhong Wan
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
David Wei Zhang
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Zhi-Jie Liu
Affiliation:
Department of Electronic Engineering, Fudan University, Shanghai 200433, China
Zhong-Qiang Huang
Affiliation:
Department of Applied Mathematics, Tongji University, Shanghai 200092, China
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Abstract

Three-dimensional temperature (T)–pressure (P)–composition (X) phase diagrams of binary carbon-hydrogen (C–H) and carbon-oxygen (C–O) systems for activated low pressure diamond growth have been calculated. Based on an approximation of linear combination between C–H and C–O systems, a projective ternary carbonhydrogen-oxygen (C–H–O) phase diagram has also been obtained. There is always a diamond growth region in each of these phase diagrams. Once a supply of external activating energy stops, the diamond growth region will not exist. Nearly all of the reliable experimental data reported in the literature drop into the possible diamond growth region of the calculated projective ternary C–H–O phase diagram under the conditions of 0.01–100 kPa and above 700 K.

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Articles
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1.Spear, K. E., Earth Mineral Sci. 56, 53 (1987).Google Scholar
2.Fu, X-C., Shen, W-X., and Yao, T-Y., Physical Chemistry, 4th ed. (High Education Press, Beijing, 1990), p. 421, p. 15.Google Scholar
3.Setaka, N., in Diamond Materials, edited by Dismukes, J. P. and Ravi, K. V. (The Electrochemical Society, Pennington, NJ, 1993), p. 1.Google Scholar
4.Roy, R., Dewan, H. S., and Ravindranathan, P., in Diamond Materials, edited by Dismukes, J. P. and Ravi, K. V. (The Electrochemical Society, Pennington, NJ, 1993), p. 601.Google Scholar
5.Spitsyn, B. V., in Diamond Materials, edited by Dismukes, J. P. and Ravi, K. V. (The Electrochemical Society, Pennington, NJ, 1993), p. 345.Google Scholar
6.Jou, S., Doerr, H. J., and Bunshah, R. F., Thin Solid Films 253, 95 (1994).CrossRefGoogle Scholar
7. Japanese patent, JP-63117993, May 21, 1988.Google Scholar
8. Japanese patent, JP-63117995, May 21, 1988.Google Scholar
9.Prigogine, I., Introduction to Thermodynamics of Irreversible Processes, 3rd ed. (Interscience Publishers, New York, 1967), p. 25.Google Scholar
10.Shen, R-Q. and Gu, Q-M., Biochemistry (High Education Press, Beijing, 1993), p. 300.Google Scholar
11.Wang, J-T. and Carlsson, J-O., Surf. Coat. Technol. 43/44, 1 (1990).CrossRefGoogle Scholar
12.Wang, J-T., Cao, C-B., and Zheng, P-J., J. Electrochem. Soc. 141, 278 (1994).CrossRefGoogle Scholar
13.Wang, J-T. and Zheng, P-J., Chinese Sci. Bull., Chinese ed. 40, 1056 (1995); English ed. 40, 1141 (1995).CrossRefGoogle Scholar
14.Wang, J-T., Zheng, P-J., Yang, Q-H., and Wang, H., in Diamond Materials IV, edited by Ravi, K. V. and Dismukes, J. P. (The Electrochemical Society, Pennington, NJ, 1995), p. 13.Google Scholar
15.Wang, J-T., Huang, Z-Q., Yang, Q-H., Zhang, D. W., and Wan, Y-Z., in Proc. 13th Int. Conf. on CVD, edited by Besmann, T. M., Allendorf, M. D., Robinson, McD., and Ulrich, R. K. (The Electrochemical Society, Pennington, NJ, 1996), p. 727.Google Scholar
16.Bachmann, P. K., Leers, D., and Lydtyn, H., Diamond Relat. Mater. 1, 1 (1991).CrossRefGoogle Scholar
17.Pinter, I., Tebano, A., Paoletti, A., and Paroli, P., Diamond Relat. Mater. 3, 126 (1993).CrossRefGoogle Scholar
18.Prijaya, N. A., Angus, J. C., and Bachmann, P. K., Diamond Relat. Mater. 3, 129 (1993).CrossRefGoogle Scholar
19.Hwang, N. M., Hahn, J. H., and Bahng, G. W., Diamond Relat. Mater. 3, 163 (1993).CrossRefGoogle Scholar
20.Mao, M-Y., Jin, X-F., Wang, T-P., Xie, J-F., Tan, S-S., Wang, W-Y., Zhang, X-K., and Zhuang, Z-C., Appl. Phys. Lett. 66, 16 (1995).CrossRefGoogle Scholar
21.Marinelli, M., Milani, E., Montuori, M., Paoletti, A., Tebano, A., Balestrino, G., and Paroli, P., J. Appl. Phys. 76, 5702 (1994).CrossRefGoogle Scholar
22.Wang, J-T., Huang, Z-Q., Wan, Y-Z., Zhang, D. W., and Jia, H-Y., J. Mater. Res. 12, 1530 (1997).CrossRefGoogle Scholar