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Carrier diffusion characterization in epitaxial 4H–SiC

Published online by Cambridge University Press:  31 January 2011

Paulius Grivickas ,
Jan Linnros  and
Vytautas Grivickas
Paulius Grivickas
Affiliation:
Department of Solid State Electronics, Royal Institute of Technology, Electrum 229, S-164 40, Kista-Stockholm, Sweden
Jan Linnros
Affiliation:
Department of Solid State Electronics, Royal Institute of Technology, Electrum 229, S-164 40, Kista-Stockholm, Sweden
Vytautas Grivickas
Affiliation:
Institute of Material Research and Applied Sciences, Vilnius University, Szaulėtekio 10, 2054 Vilnius, Lithuania
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Abstract

Carrier diffusivity has been experimentally determined in low-doped n-type epitaxial 4H–SiC over a wide injection range using a Fourier transient grating technique. The data showed that, with injection, the diffusion coefficient increased from a minority-hole diffusivity Dh = 2.3 cm2/s to an ambipolar diffusivity Da = 4.2 cm2/s at approximately 1016 cm−3 with a substantial decrease occurring at higher injections. The derived Dh value corresponded to a minority-hole drift mobility of μh = 90 cm2/Vs, about 30% lower than available majority-hole mobilities. Also, the temperature dependence of the ambipolar diffusivity in the 296–523 K range has been determined. It followed a power law Da ∼ T−1.3 which notably differed from the expected one using the majority-hole mobility temperature dependence.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 2 , February 2001 , pp. 524 - 528
Copyright
Copyright © Materials Research Society 2001

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References

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