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Changes in Preferred Orientation of Pt Thin Films Deposited by dc Magnetron Sputtering Using Ar/O2 Gas Mixtures

Published online by Cambridge University Press:  31 January 2011

Min Hong Kim ,
Tae-Soon Park ,
Euijoon Yoon ,
Dong-Su Lee ,
Dong-Yeon Park ,
Hyun-Jung Woo ,
Dong-Il Chun  and
Jowoong Ha
Min Hong Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
Tae-Soon Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
Euijoon Yoon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151–742, Korea
Dong-Su Lee
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyoungki 449–910, Korea
Dong-Yeon Park
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyoungki 449–910, Korea
Hyun-Jung Woo
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyoungki 449–910, Korea
Dong-Il Chun
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyoungki 449–910, Korea
Jowoong Ha
Affiliation:
Advanced Materials Area, Tong Yang Central Laboratories, Yongin, Kyoungki 449–910, Korea
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Abstract

(200)-oriented Pt thin films were deposited on SiO2/Si substrates by dc magnetron sputtering using Ar/O2 gas mixtures. Oxygen incorporation into Pt films changed deposition rate, resistivity, stress, and preferred orientation of the films. Increase in film resistivity and decrease in tensile stress were presumed to be the results of the incorporated oxygen into grain boundaries, while the change of preferred orientation resulted from the oxygen incorporation into the Pt lattice. The preferential growth of (200) planes with less total strain energy from the incorporated oxygen resulted in strong (200) preferred orientation in Pt films.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 4 , April 1999 , pp. 1255 - 1260
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1.Moazzami, R., Semicond. Sci. Technol. 10, 375 (1995).CrossRefGoogle Scholar
2.Al-Shareef, H. N., Gifford, K. D., Rou, S. H., Hren, P. D., Auciello, O., and Kingon, A., Integrated Ferroelectronics 3, 321 (1993).CrossRefGoogle Scholar
3.Hren, P. D., Rou, S. H., Al-Shareef, H. N., Ameen, M. S., Auciello, O., and Kingon, A. I., Integrated Ferroelectrics 2, 311 (1992).CrossRefGoogle Scholar
4.Hwang, C. S., Park, S. O., Kang, C. S., Cho, H-J., Kang, H-K., Ahn, S. T., and Lee, M.Y., Jpn. J. Appl. Phys. 34, 5178 (1995).CrossRefGoogle Scholar
5.Al-Shareef, H. N., Bellur, K. R., Auciello, O., and Kingon, A. I., Ferroelectrics 152, 85 (1994).CrossRefGoogle Scholar
6.Okuyama, M. and Hamakawa, Y., Int. J. Eng. Sci. 29, 391 (1991).CrossRefGoogle Scholar
7.Ogawa, T., Senda, A., and Kasnami, T., Jpn. J. Appl. Phys. 30, 2145 (1991).CrossRefGoogle Scholar
8.Kanno, I., Fujii, S., Kamada, T., and Takayama, R., Appl. Phys. Lett. 70, 1378 (1997).CrossRefGoogle Scholar
9.Kim, S. and Baik, S., J. Vac. Sci. Technol. A 13, 95 (1995).CrossRefGoogle Scholar
10.Narayan, J., Tiwari, P., Jagannadham, K., and Holland, O. W., Appl. Phys. Lett. 64, 2093 (1994).CrossRefGoogle Scholar
11.Hecq, M., Hecq, A., and Liemans, M., J. Appl. Phys. 49, 6176 (1978).CrossRefGoogle Scholar
12.Hecq, M. and Hecq, A., J. Vac. Sci. Technol. 18, 219 (1981).CrossRefGoogle Scholar
13.Gittis, A. and Dobrev, D., Thin Solid Films 130, 335 (1985).CrossRefGoogle Scholar
14.Oh, U. C. and Je, J.H., J. Appl. Phys. 74, 1692 (1993).CrossRefGoogle Scholar
15.Stoney, G. G., Proc. R. Soc. London, Ser. A 82, 172 (1909).Google Scholar
16.Lee, D-S., Park, D-Y., Kim, M. H., Chun, D-I., Ha, J., and Yoon, E., in Thin Films—Structure and morphology, edited by Moss, S. C., Ila, D., Cammarata, R.C., Chason, E. H., Einstein, T. L., and Williams, E. D. (Mater. Res. Soc. Symp. Proc. 441, Pittsburgh, PA, 1997), p. 341.Google Scholar
17.Bennewitz, C.D., Westwood, W.D., and Brown, J.D., J. Appl. Phys. 46, 558 (1975).CrossRefGoogle Scholar
18.Neff, N., Henkel, S., Hartmannsgruber, E., Steinbeiss, E., Michalke, W., Steenbeck, K., and Schmidt, H. G., J. Appl. Phys. 79, 7672 (1996).CrossRefGoogle Scholar
19.Thornton, J. A., J. Vac. Sci. Technol. A 4, 3059 (1986).CrossRefGoogle Scholar
20.CRC Handbook of Chemistry and Physics, 68th ed. (CRC Press Inc., Boca Raton, FL).Google Scholar
21.Alexander, P. M. and Hoffmann, R. W., J. Vac. Sci. Technol. 13, 96 (1976).CrossRefGoogle Scholar
22.Machlin, E. S., Materials Science in Microelectronics: The Relationships between Thin Film Processing and Structure (Giro Press, New York, 1995), pp. 157–171.Google Scholar
23.Lotgerling, F. K., J. Inorg. Nucl. Chem. 9, 113 (1959).CrossRefGoogle Scholar
24. JCPDS 4–802.Google Scholar
25.Park, D-Y., Lee, D-S., Kim, M. H., Park, T-S., Woo, H-J., Yoon, E., Chun, D-I., and Ha, J., in Thin Films—Structure and morphology, edited by Moss, S. C., Ila, D., Cammarata, R. C., Chason, E. H., Einstein, T. L., and Williams, E. D. (Mater. Res. Soc. Symp. Proc. 441, Pittsburgh, PA, 1997), p. 335.Google Scholar
26.Kim, M. H., Park, T-S., Lee, D-S., Park, D-Y., Woo, H-J., Chun, D-I., Ha, J., and Yoon, E., J. Mater. Res. 14, 634 (1999).CrossRefGoogle Scholar