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Chemistry, microstructure, and electrical properties at interfaces between thin films of titanium and alpha (6H) silicon carbide (0001)

Published online by Cambridge University Press:  03 March 2011

L.M. Porter ,
R.F. Davis ,
J.S. Bow ,
M.J. Kim ,
R.W. Carpenter  and
R.C. Glass
L.M. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
R.F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
J.S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
M.J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
R.W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704
R.C. Glass
Affiliation:
Westinghouse Science and Technology Center, Westinghouse Corporation, Pittsburgh, Pennsylvania 15235
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Abstract

Epitaxial thin films (4–1000 Å) of Ti contacts have been deposited via UHV electron beam evaporation at room temperature on monocrystalline, n-type, alpha (6H)-SiC(0001). The interfacial chemistry and microstructure, and the electrical properties, were investigated at room temperature and after annealing at 700 °C up to 60 min. High resolution TEM analyses revealed the formation during annealing of reaction zones consisting of Ti5Si3 and TiC. The corresponding electrical properties exhibited considerable stability except after an initial 20 min anneal. Current-voltage (I-V) measurements showed that the Ti contacts were rectifying with low ideality factors (n < 1.09) and typical leakage currents of 5 × 10−7 A/cm2 at −10 V. The Schottky barrier heights calculated from x-ray photoelectron spectroscopy and I-V and V-V measurements were between 0.79 and 0.88 eV for the as-deposited contacts and between 0.86 and 1.04 eV for the annealed contacts.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 3 , March 1995 , pp. 668 - 679
Copyright
Copyright © Materials Research Society 1995

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